Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
View Patent ↗This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
1. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of a compound selected from the group consisting of:
(i) compounds of the formula:
wherein R 1 and R 2 may be the same as or different from each another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, aryl, and C 3 -C 6 cycloalkyl, or R 1 and R 2 together may form C 3 -C 6 heterocyclic functional group with N, and wherein X, Y, and Z may be the same as or different from one another and are independently selected from the group consisting of C 1 -C 7 alkyl, alkylamino, and dialkylamino; and
(ii) compounds of the formula:
wherein R 1 , R 2 , R 3 , and R 4 may be the same as or different from one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, aryl, and C 3 -C 6 cycloalkyl, or R 1 and R 2 together may form a C 3 -C 6 heterocyclic functional group with N, or R 3 and R 4 together may form a C 3 -C 6 heterocyclic functional group with N, and wherein X 1 , X 2 , Y 1 , and Y 2 may be the same as or different from one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, alkylamino, dialkylamino, and R 1 R 2 NNH—, wherein R 1 and R 2 are as described above, and wherein R 1 , R 2 , R 3 , R 4 , X 1 , X 2 , Y 1 , and Y 2 are not all methyl.
2. The method of claim 1 , wherein the vapor deposition conditions comprise temperature below 450° C.
3. The method of claim 1 , wherein the compound is selected from the group consisting of compounds of formula (I).
4. The method of claim 1 , wherein said film comprises silicon dioxide, silicon nitride or siliconoxynitride.
5. The method of claim 1 , wherein said film comprises a low dielectric constant silicon-containing film.
6. The method of claim 1 , wherein said film comprises a gate silicate film.
7. The method of claim 1 , wherein the substrate comprises a semiconductor device substrate.
8. The method of claim 1 , wherein said vapor deposition comprises chemical vapor deposition and said vapor is transported to said contacting at temperature below 300° C.
9. The method of claim 1 , conducted in an ULSI device fabrication process.
10. The method of claim 1 , wherein X, Y and Z are all C 1 -C 7 alkyl.
11. The method of claim 1 , wherein the compound is Me 3 Si(HNNMe 2 ).
12. The method of claim 11 , further comprising forming said vapor by volatilizing Me 3 Si(HNNMe 2 ) from a liquid phase.
13. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions comprising a temperature below 450° C. with a vapor of a compound selected from the group consisting of:
(i) compounds of the formula:
wherein R 1 and R 2 may be the same as or different from each another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, aryl, and C 3 -C 6 cycloalkyl, or R 1 and R 2 together may form C 3 -C 6 heterocyclic functional group with N, and wherein X, Y, and Z are all the same as one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, alkylamino, dialkylamino, and R 1 R 2 NNH—, wherein R 1 and R 2 are same as above and wherein R 1 R 2 , X, Y and Z are not all H; and
(ii) compounds of the formula:
wherein R 1 , R 2 , R 3 , and R 4 may be the same as or different from one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, aryl, and C 3 -C 6 cycloalkyl, or R 1 and R 2 together may form a C 3 -C 6 heterocyclic functional group with N, or R 3 and R 4 together may form a C 3 -C 6 heterocyclic functional group with N, and wherein X 1 , X 2 , Y 1 , and Y 2 may be the same as or different from one another and are independently selected from the group consisting of H, C 1 -C 7 alkyl, alkylamino, dialkylamino, and R 1 R 2 NNH—, wherein R 1 and R 2 are as described above, and wherein R 1 , R 2 , R 3 , R 4 , X 1 , X 2 , Y 1 , and Y 2 are not all methyl.
14. The method of claim 13 , wherein X, Y and Z are all C 1 -C 7 alkyl.
15. The method of claim 13 , wherein said film comprises silicon dioxide, silicon nitride or siliconoxynitride.
16. The method of claim 13 , wherein said film comprises a low dielectric constant silicon-containing film.
17. The method of claim 13 , wherein said film comprises a gate silicate film.
18. The method of claim 13 , wherein the substrate comprises a semiconductor device substrate.
19. The method of claim 13 , wherein X, Y and Z are all alkylhydrazido.
20. The method of claim 19 , wherein the alkylhydrazido is methylhydrazido or ethylhydrazido.