Antimony compounds useful for deposition of antimony-containing materials
View Patent ↗Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge 2 Sb 2 Te 5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
1. An antimony precursor having one of the following formulae:
wherein:
each of R, R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , and R 9 is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
X is the same as or different from others, and each is independently selected from H, halogen, C 1 -C 6 alkyl, C 1 -C 6 alkoxy, C 3 -C 8 cycloalkyl, C 6 -C 10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl, amidinate, guanidinate, isourate, cyclopentadienyl (C 5 R 5 ); and
n is an integer from 1 to 7.
2. The antimony precursor of claim 1 , comprising an antimony bis-amide of the formula
3. The antimony precursor of claim 1 , comprising an antimony bis-amide of the formula.
4. The antimony precursor of claim 1 , comprising an antimony bis-amide of the formula
5. The antimony precursor of claim 1 , comprising an antimony bis-amide of the formula
6. The antimony precursor of claim 1 , comprising an antimony bis-amide of the formula
7. The antimony precursor of claim 1 , comprising an antimony bis-amide of the formula
8. A composition comprising:
(a) an antimony precursor of claim 1 ; and
(b) a solvent medium in which said compound is dissolved.
9. The composition of claim 8 , wherein the solvent medium comprises a hydrocarbon solvent.
10. The composition of claim 9 , wherein the hydrocarbon solvent comprises one or more of alkanes, aromatics and amines.
11. The composition of claim 9 , wherein the hydrocarbon solvent comprises one or more of hexane, heptane, octane, and pentane, benzene, toluene, triethylamine, and tert-butylamine.
12. A precursor vapor comprising vapor of an antimony precursor of claim 1 .
13. The precursor vapor of claim 12 , further comprising a co-reactant selected from the group consisting of O 2 , N 2 O, H 2 O, ozone, O 2 plasma, hydrogen, H 2 /plasma, amines, imines, hydrazines, silanes, germanes, ammonia, alkanes, alkenes, alkynes, boranes and compatible mixtures thereof, wherein the precursor vapor may be delivered simultaneously with the co-reactant or may be delivered in a pulsed manner wherein the precursor vapor and the co-reactant are temporarily separated.
14. A method of depositing an antimony-containing film on a substrate, comprising volatilizing an antimony precursor of claim 1 to form a precursor vapor, and contacting the substrate with the precursor vapor under deposition conditions to form the antimony-containing film on the substrate.
15. A method of forming a GST film on a substrate, comprising depositing antimony on the substrate from vapor of an antimony precursor of claim 1 .
16. A method of making a PCRAM device, comprising forming a GST film on a substrate for fabrication of said device, wherein said forming comprises depositing antimony on the substrate from vapor of an antimony precursor of claim 1 .
17. A method of forming an antimony-containing film on a substrate, comprising volatilizing precursor of claim 1 to form a precursor vapor, and contacting the precursor vapor with the substrate under atomic layer deposition or chemical vapor deposition conditions.
18. The method of claim 17 , wherein the antimony-containing film is a GST film.
19. The method of claim 17 , wherein the antimony-containing film is an amorphous GeTe film or an amorphous SbTe film.
20. A method of combating pre-reaction of a vapor phase precursor derived from a precursor of claim 1 in contact with a substrate for deposition of a film component thereon, comprising contacting said substrate, prior to said contact of the vapor phase precursor therewith, with a pre-reaction-combating agent selected from the group consisting of (i) heteroatom (O, N, S) organo Lewis base compounds, (ii) free radical inhibitors, and (iii) deuterium-containing reagents.