Phase change memory structure comprising phase change alloy center-filled with dielectric material
View Patent ↗A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film; at least partially filling the open core volume with alumina or other dielectric material; and forming a top electrode at an upper portion of the cavity.
1. A phase change memory structure, comprising a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein said cavity is bounded by side wall surface, wherein the cavity is coated on said side wall surface with a film of phase change memory material forming a core including core volume bounded by the phase change material, and the core volume bounded by the phase change material is at least partially filled with a material selected from the group consisting of: (i) alumina; (ii) titania, (iii) titania and alumina.
2. The phase change memory structure of claim 1 , wherein the core is at least partially filled with alumina.
3. The phase change memory structure of claim 1 , wherein the core is at least partially filled with titania.
4. The phase change memory structure of claim 1 , wherein the core is at least partially filled with titania and alumina.
5. A phase change memory structure, comprising a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein said cavity is bounded by side wall surface, wherein the cavity is coated on said side wall surface with a film of phase change memory material forming a core, wherein the core is at least partially filled with multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of (a) alumina, (b) titania, (c) titania and alumina, or (d) germanium oxide.
6. The phase change memory structure of claim 5 , wherein the core is at least partially filled with multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of alumina.
7. The phase change memory structure of claim 5 , wherein the core is at least partially filled with multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of titania.
8. The phase change memory structure of claim 5 , wherein the phase change memory material comprises a germanium-antimony-tellurium alloy or germanium telluride.
9. The phase change memory structure of claim 5 , wherein the core is at least partially filled with multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of titania and alumina.
10. The phase change memory structure of claim 5 , wherein the core is at least partially filled with multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of germanium oxide.
11. A phase change memory device comprising at least one phase change memory structure of claim 5 .
12. A method of making a phase change memory structure in a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein said cavity is bounded by side wall surface, said method comprising coating said side wall surface with a film of phase change memory material to form an open volume core including core volume bounded by the phase change material, and depositing in said core volume bounded by the phase change material a material selected from the group consisting of: (i) alumina; (ii) titania, (iii) titania and alumina.
13. The method of claim 12 , comprising depositing alumina in said core.
14. The method of claim 12 , comprising depositing titania in said core.
15. The method of claim 12 , comprising depositing titania and alumina in said core.
16. A method of making a phase change memory structure in a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein said cavity is bounded by side wall surface, said method comprising coating said side wall surface with a film of phase change memory material to form an open volume core, and depositing in said core a multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of (a) alumina, (b) titania, (c) titania and alumina, or (d) germanium oxide.
17. The method of claim 16 , comprising depositing in said core said multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of alumina.
18. The method of claim 16 , comprising depositing in said core said multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of titania.
19. The method of claim 16 , comprising depositing in said core said multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of titania and alumina.
20. The method of claim 16 , comprising depositing in said core said multilayer material including multiple layers of the phase change memory material wherein each layer of the phase change memory material is separated from a next successive layer of the phase change material by a film of germanium oxide.