Isotopically-enriched boron-containing compounds, and methods of making and using same
View Patent ↗An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
1. A process system, comprising:
a process tool;
a first boron precursor source configured to supply a first boron precursor to the process tool; and
a second boron precursor source configured to supply a second boron precursor to the process tool concurrently with the first boron precursor,
wherein the first boron precursor source comprises B 2 F 4 and the second boron precursor source comprises diborane.
2. The process system of claim 1 , wherein the process tool comprises an ion implantation apparatus.
3. The process system of claim 1 , comprising a co-flow feed line for introducing co-flowed first and second boron precursors to the process tool, where each of the first boron precursor source and second boron precursor source comprises a precursor supply vessel coupled in flow communication to the co-flow feed line.
4. The process system of claim 1 , wherein the process tool comprises a boron doping ion implantation apparatus disposed in a manufacturing facility configured to produce product articles, assemblies, or subassemblies, comprising boron doped material.
5. The process system of claim 4 , wherein the manufacturing facility is configured to produce semiconductor product articles, assemblies, or subassemblies, comprising doped boron material.
6. The process system of claim 4 , wherein the manufacturing facility is configured to produce solar energy product articles, assemblies, or subassemblies, comprising boron doped material.
7. The process system of claim 4 , wherein the manufacturing facility is configured to produce flat panel display product articles, assemblies, or subassemblies, comprising boron doped material.
8. The process system of claim 1 , wherein at least one of said B 2 F 4 and diborane is isotopically enriched.
9. The process system of claim 1 , wherein said B 2 F 4 is isotopically enriched.
10. The process system of claim 1 , wherein said diborane is isotopically enriched.
11. The process system of claim 1 , wherein both of said B 2 F 4 and diborane are isotopically enriched.