Interposer for stacked semiconductor devices
A semiconductor device is disclosed, comprising a substrate having at least one substrate bonding pad. A plurality of semiconductor dies are stacked on the substrate. Each semiconductor die has at least one die bonding pad located on an active surface of the die. A plurality of interposers are each mounted on a corresponding one of the semiconductor dies. Each interposer has an aperture formed therethrough in alignment with the at least one die bonding pad. An electrical connection between the at least one die bonding pad and the at least one substrate bonding pad is formed at least in part by the interposer. The electrical connection includes at least one wire bond.
1. A semiconductor device comprising:
a substrate having at least one substrate bonding pad;
a plurality of semiconductor dies stacked on the substrate, each semiconductor die having at least one die bonding pad located on an active surface of the die;
a plurality of interposers, each interposer being mounted on a corresponding one of the semiconductor dies, each interposer having an aperture formed therethrough in alignment with the at least one die bonding pad; and
an electrical connection between the at least one die bonding pad and the at least one substrate bonding pad, the electrical connection being formed at least in part by the interposer, the electrical connection including at least one wire bond.
2. The semiconductor device of claim 1 , further comprising:
a plurality of spacers, each spacer being mounted on a corresponding one of the interposers.
3. The semiconductor device of claim 2 , wherein each of the plurality of spacers has an aperture formed therethrough, the aperture being generally in alignment with the aperture of the corresponding interposer.
4. The semiconductor device of claim 1 , wherein the at least one die bonding pad is a plurality of die bonding pads.
5. The semiconductor device of claim 4 , wherein the plurality of die bonding pads are located in a central region of the active surface of the semiconductor die.
6. The semiconductor device of claim 5 , wherein the plurality of die bonding pads are located along a central spine of the semiconductor die.
7. The semiconductor device of claim 4 , wherein each interposer further comprises a plurality of aperture bonding pads disposed along the aperture, each aperture bonding pad corresponding to one of the plurality of die bonding pads.
8. The semiconductor device of claim 7 , wherein the electrical connection comprises an electrical connection between each aperture bonding pad and the corresponding die bonding pad.
9. The semiconductor device of claim 8 , wherein the electrical connection between each aperture bonding pad and the corresponding die bonding pad is a wire bond.
10. The semiconductor device of claim 9 , further comprising a plurality of spacers, each spacer being mounted on a corresponding one of the interposers.
11. The semiconductor device of claim 10 , wherein each of the plurality of spacers has an aperture formed therethrough, the aperture being generally in alignment with the aperture and the aperture bonding pads of the corresponding interposer.
12. The semiconductor device of claim 9 , wherein the electrical connection further comprises a conductive trace connecting each aperture bonding pad to a corresponding one of a plurality of edge bonding pads disposed along an outer edge of the interposer.
13. The semiconductor device of claim 12 , wherein the conductive traces are formed on the interposer.
14. The semiconductor device of claim 12 , wherein the conductive traces are formed in an internal portion of the interposer.
15. The semiconductor device of claim 12 , wherein the electrical connection further comprises a wire bond between each edge bonding pad and the corresponding substrate bonding pad.
16. The semiconductor device of claim 15 , wherein the electrical connection further comprises a wire bond between each aperture bonding pad and the corresponding die bonding pad.