Secondary Alloyed 1N Copper Wires for Bonding in Microelectronics Devices
A secondary alloyed 1N copper wire for bonding in microelectronics contains one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.09 wt % and about 9.9 wt %.
1 . A secondary alloyed 1N copper wire for bonding in microelectronics, wherein the wire comprises one or more corrosion resistance alloying materials selected from the group consisting of Ag, Ni, Pd, Au, Pt, and Cr, and wherein a total concentration of the corrosion resistance alloying materials is between about 0.99 wt % and about 9.9 wt %.
2 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Ag.
3 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Ni.
4 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 1.18 wt % to about 9.9 wt % Pd.
5 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Au.
6 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Pt.
7 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.99 wt % to about 9.9 wt % Cr.
8 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % Ag and about 0.09 wt % to about 9.8 wt % Ni.
9 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % Ag and about 0.09 wt % to about 9.8 wt % Pd.
10 . The secondary alloyed 1N copper wire as claimed in claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % of Ag and about 0.09 wt % to about 9.8 wt % of Au.
11 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % Ag and about 0.09 wt % to about 9.8 wt % Pt.
12 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material comprises about 0.005 wt % to about 0.1 wt % Ag and about 0.09 wt % to about 9.8 wt % Cr.
13 . The secondary alloyed 1N copper wire according to claim 1 , wherein the corrosion resistance alloying material further comprises about 0.008 wt % P.
14 . The secondary alloyed 1N copper wire according to claim 1 , further comprising about 0.0003 wt % S.
15 . A secondary alloyed 1N copper wire for bonding in microelectronics, wherein the wire consists of copper and one or more corrosion resistance alloying materials selected from the group consisting of Ag, Ni, Pd, Au, Pt, and Cr, and wherein a total concentration of the corrosion resistance alloying materials is between about 0.99 wt % and about 9.9 wt %.
16 . A system for bonding an electronic device, comprising a first bonding pad, a second bonding pad, and a secondary alloyed 1N copper wire according to claim 1 , wherein the wire is connected to the first and the second bonding pads by wedge-bonding.