IP Library Granted Patent US 9,589,694
Granted Patent B2
US 9,589,694 · App. 13/690,701 · Granted Mar 7, 2017

Alloyed 2N copper wires for bonding in microelectronics devices

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Quick Facts
Patent No.
US 9,589,694
App. No.
13/690,701
Granted
Mar 7, 2017
Kind
B2
Abstract

An alloyed 2N copper wire for bonding in microelectronics contains 2N copper and one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %.

Claims (13)

1. An alloyed 2N copper wire for bonding in microelectronics, wherein the wire has a diameter of 10 to 250 μm and consists of 2N copper and two corrosion resistance alloying materials selected from the group consisting of Ag, Ni, Pd, Au, Pt, and Cr, and wherein a concentration of the corrosion resistance alloying materials is between about 0.009 wt % and about 0.99 wt %.

2. The alloyed 2N copper wire according to claim 1 , wherein the wire consists of about 0.005 wt % to about 0.07 wt % Ag, about 0.009 wt % to about 0.89 wt % Ni, and balance 2N copper.

3. The alloyed 2N copper wire according to claim 1 , wherein the wire consists of about 0.005 wt % to about 0.07 wt % Ag, about 0.009 wt % to about 0.89 wt % Pd, and balance 2N copper.

4. The alloyed 2N copper wire according to claim 1 , wherein the wire consists of about 0.005 wt % to about 0.07 wt % Ag, about 0.009 wt % to about 0.89 wt % Au, and balance 2N copper.

5. The alloyed 2N copper wire according to claim 1 , wherein the wire consists of about 0.005 wt % to about 0.07 wt % Ag, about 0.009 wt % to about 0.89 wt % Pt, and balance 2N copper.

6. The alloyed 2N copper wire according to claim 1 , wherein the wire consists of about 0.005 wt % to about 0.07 wt % Ag, about 0.009 wt % to about 0.89 wt % Cr, and balance 2N copper.

7. A system for bonding an electronic device, comprising a first bonding pad, a second bonding pad, and an alloyed 2N copper wire according to claim 1 , wherein the wire is connected to the first and the second bonding pads by wedge-bonding.

8. An alloyed 2N copper wire for bonding in microelectronics, wherein the wire has a diameter of 10 to 250 μm and consists of 2N copper and two corrosion resistance alloying materials selected from the group consisting of:

about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Ni;

about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Pd;

about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Au;

about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Pt; and

about 0.005 wt % to about 0.07 wt % Ag and about 0.009 wt % to about 0.89 wt % Cr.

Assignments (3)
CHANGE OF NAME Recorded May 19, 2015
From: HERAEUS MATERIALS TECHNOLOGY GMBH & CO. KG
To: HERAEUS DEUTSCHLAND GMBH & CO. KG
Reel/Frame 035744/0381 →
CORRECTIVE ASSIGNMENT TO CORRECT THE SECOND INVENTOR'S LAST NAME TO READ: YEUNG PREVIOUSLY RECORDED ON REEL 029902 FRAME 0262. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT OF ASSIGNORS INTEREST. Recorded Mar 5, 2013
From: SARANGAPANI, MURALI; YEUNG, PING HA; MILKE, EUGEN
To: HERAEUS MATERIALS TECHNOLOGY GMBH & CO. KG
Reel/Frame 029922/0703 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 1, 2013
From: SARANGAPANI, MURALI; YUENG, PING HA; MILKE, EUGEN
To: HERAEUS MATERIALS TECHNOLOGY GMBH & CO. KG
Reel/Frame 029902/0262 →