IP Library Granted Patent US 9,497,861
Granted Patent B2
US 9,497,861 · App. 13/706,593 · Granted Nov 15, 2016

Methods and apparatus for package with interposers

Inventors: Chun-Lin Lu (Hsin-Chu, TW); Kai-Chiang Wu (Hsin-Chu, TW); Yen-Ping Wang (Hemei Township, TW); Shih-Wei Liang (Dajia Township, TW); Ching-Feng Yang (Taipei, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H05K1/181H01L2224/16225H01L2224/48227H01L2224/73204H01L2924/15311H05K2201/049H05K2201/10378H05K2201/10515H05K2201/10734H05K2201/2036Y02P70/611
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Quick Facts
Patent No.
US 9,497,861
App. No.
13/706,593
Granted
Nov 15, 2016
Kind
B2
Abstract

Methods and apparatus for an interposer with a dam used in packaging dies are disclosed. An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.

Claims (35)

1. A device, comprising:

a substrate;

a metal layer above the substrate;

a first contact pad and a second contact pad above the metal layer; and

a first dam above the metal layer, the first dam comprising a first layer of conductive material and a second layer of non-conductive material above the first layer of conductive material, wherein the first dam surrounds an area, the first contact pad being within the area, and the second contact pad being outside the area.

2. The device of claim 1 , wherein the first dam comprises a plurality of discontinuous segments surrounding the area.

3. The device of claim 1 , wherein the conductive material is selected from a group consisting essentially of aluminum, copper, titanium, nickel, and a combination thereof.

4. The device of claim 1 , wherein the first dam is a rectangle shape with a height in a range from about a size of a diameter of a connector to about 1/10 of the size of the diameter of the connector, the connector being attached to the second contact pad.

5. The device of claim 1 , wherein the first dam has a body that is a substantially constant thickness.

6. The device of claim 1 , wherein the first dam is a shape of a circle, an octagon, a rectangle, an oval, or a diamond.

7. The device of claim 1 , wherein the non-conductive material is selected from a group consisting essentially of benzotriazole (BT), modified silicone, epoxy creasol novolac (ECN), modified BT, polyethyl sulfone (PES) polycarbonate, polysulfone, and a combination thereof.

8. The device of claim 1 , further comprising a second dam surrounding the first dam and the area.

9. The device of claim 1 , further comprising a first die connected to the first contact pad above the metal layer within the area surrounded by the first dam.

10. The device of claim 9 , further comprising an underfill under the first die, above the metal layer, and contained within the area surrounded by the first dam.

11. The device of claim 10 , further comprising:

a connector above the second contact pad above the metal layer; and

a package above the first die, connected to the connector, wherein the package comprises a substrate, and a second die connected to the substrate.

12. A device, comprising:

a first substrate;

a metal layer above the first substrate;

a first dam above the metal layer, wherein the first dam surrounds an area of a size larger than a size of a first die connected to a first contact pad above the metal layer within the area, the first dam comprises a layer of metal material and a layer of non-conductive material;

an underfill under the first die, above the metal layer, and contained within the area surrounded by the first dam;

a connector above a second contact pad outside the area surrounded by the first dam above the metal layer; and

a package above the first die, connected to the connector, wherein the package comprises a second substrate, and a second die connected to the second substrate.

13. The device of claim 12 , wherein the first dam is of a rectangle shape with a width from about 100 um to about 200 um, and a height in a range from about 15 um to about 30 um.

14. The device of claim 12 , wherein the metal material is selected from a group consisting essentially of aluminum, copper, titanium, nickel, and a combination thereof.

15. A structure comprising:

an interposer having a first side with a central region and a periphery region around the central region, first contact pads being in the central region, second contact pads being in the periphery region, a first dam being on the first side of the interposer, around the central region, and between the central region and the periphery region, the first dam comprising a layer of metal, continuous across a cross-sectional width of the first dam, and a layer of non-conductive material;

a die having first connectors attached to the first contact pads in the central region; and

an underfill between the die and the first side of the interposer and in the central region.

16. The structure of claim 15 , wherein the layer of metal is disposed between the layer of the non-conductive material and the first side of the interposer.

17. The structure of claim 15 , wherein the first dam continuously encircles the central region.

18. The structure of claim 15 , wherein the first dam is discontinuous around the central region.

19. The structure of claim 15 , wherein a second dam is on the first side of the interposer, around and separate from the first dam, and between the central region and the periphery region.

20. The structure of claim 15 further comprising a first package having second connectors attached to the second contact pads on the first side of the interposer, and wherein the interposer has a second side opposite the first side, third contact pads being on the second side of the interposer, third connectors being attached to the third contact pads.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2013
From: LU, CHUN-LIN; WU, KAI-CHIANG; WANG, YEN-PING; LIANG, SHIH-WEI; YANG, CHING-FENG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 029663/0031 →
Continuity (1)
Related Publication 20140160688A1 · Jun 12, 2014