Semiconductor device and display device including the same
View Patent ↗A first transistor and a second transistor are stacked. The first transistor and the second transistor have a gate electrode in common. At least one of semiconductor films used in the first transistor and the second transistor is an oxide semiconductor film. With the use of the oxide semiconductor film as the semiconductor film in the transistor, high field-effect mobility and high-speed operation can be achieved. Since the first transistor and the second transistor are stacked and have the gate electrode in common, the area of a region where the transistors are disposed can be reduced.
1. A semiconductor device comprising:
a first transistor comprising:
a first semiconductor film;
a first conductive film over and in contact with the first semiconductor film;
a first insulating film over the first semiconductor film; and
a gate electrode over the first insulating film;
a second insulating film covering a top surface of the first conductive film; and
a second transistor comprising:
the gate electrode;
a third insulating film over the gate electrode and the second insulating film; and
a second semiconductor film over the third insulating film,
wherein the first transistor and the second transistor are stacked, and
wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor film contains at least one of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor film includes a crystal part.
4. The semiconductor device according to claim 1 , wherein the first transistor and the second transistor are each a pixel switching element.
5. A display device comprising the semiconductor device according to claim 1 .
6. A semiconductor device comprising:
a first transistor comprising:
a first semiconductor film;
a first conductive film over and in contact with the first semiconductor film;
a second conductive film over and in contact with the first semiconductor film;
a first insulating film over the first semiconductor film; and
a gate electrode over the first insulating film;
a second insulating film covering a top surface of the first conductive film and a top surface of the second conductive film; and
a second transistor comprising:
the gate electrode;
a third insulating film over the gate electrode and the second insulating film;
a second semiconductor film over the third insulating film;
a third conductive film at least partly in contact with the second semiconductor film; and
a fourth conductive film at least partly in contact with the second semiconductor film,
wherein the first transistor and the second transistor are stacked, and
wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.
7. The semiconductor device according to claim 6 , wherein the oxide semiconductor film contains at least one of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.
8. The semiconductor device according to claim 6 , wherein the oxide semiconductor film includes a crystal part.
9. The semiconductor device according to claim 6 , wherein the first transistor and the second transistor are each a pixel switching element.
10. A display device comprising the semiconductor device according to claim 6 .
11. A semiconductor device comprising:
a first transistor comprising:
a first semiconductor film;
a first conductive film over and in contact with the first semiconductor film;
a second conductive film over and in contact with the first semiconductor film;
a first insulating film over the first semiconductor film; and
a gate electrode over the first insulating film;
a second insulating film covering a top surface of the first conductive film and a top surface of the second conductive film; and
a second transistor comprising:
the gate electrode;
a third insulating film over the gate electrode and the second insulating film;
a second semiconductor film over the third insulating film;
a fourth insulating film over the second semiconductor film;
a third conductive film at least partly in contact with the second semiconductor film; and
a fourth conductive film at least partly in contact with the second semiconductor film,
wherein the first transistor and the second transistor are stacked,
wherein the third conductive film and the fourth conductive film are provided over the fourth insulating film, and
wherein at least one of the first semiconductor film and the second semiconductor film is an oxide semiconductor film.
12. The semiconductor device according to claim 11 , wherein the oxide semiconductor film contains at least one of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.
13. The semiconductor device according to claim 11 , wherein the oxide semiconductor film includes a crystal part.
14. The semiconductor device according to claim 11 , wherein the first transistor and the second transistor are each a pixel switching element.
15. A display device comprising the semiconductor device according to claim 11 .