Method of manufacturing a semiconductor device
A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a first amorphous insulating film comprising a first element on a substrate;
(b) doping the first amorphous insulating film with a second element different from the first element to form a second amorphous insulating film including the first element and the second element on the first amorphous insulating film; and
(c) changing a phase of the second amorphous insulating film by subjecting the second amorphous insulating film to an annealing process at a predetermined annealing temperature to form a third insulating film from the second amorphous insulating film,
wherein a concentration of the second element in the second amorphous insulating film is controlled according to the predetermined annealing temperature.
2. The method of claim 1 , wherein the third insulating film has an aluminum concentration of 1% to 10%.
3. The method of claim 2 , wherein the third insulating film has an aluminum concentration of 8% or higher.
4. The method of claim 1 , wherein the third insulating film has an aluminum concentration of 16% or higher.
5. The method of claim 1 , wherein the first element comprises one of hafnium and zirconium.
6. The method of claim 5 , wherein the third insulating film comprises one of a tetragonal hafnium aluminate film and a tetragonal zirconium aluminate film.
7. The method of claim 1 , wherein the second element comprises aluminum.
8. The method of claim 7 , wherein the third insulating film comprises one of a tetragonal hafnium aluminate film and a tetragonal zirconium aluminate film.
9. The method of claim 5 , wherein the second element comprises aluminum.
10. The method of claim 9 , wherein the third insulating film comprises one of a tetragonal hafnium aluminate film and a tetragonal zirconium aluminate film.
11. The method of claim 1 , further comprising:
forming a titanium oxide film on the second amorphous insulating film after the step (c).
12. The method of claim 5 , wherein the third insulating film has an aluminum concentration of 1% to 10%.
13. The method of claim 12 , wherein the third insulating film has an aluminum concentration of 8% or higher.
14. The method of claim 5 , wherein the third insulating film has an aluminum concentration of 16% or higher.
15. The method of claim 7 , wherein the third insulating film has an aluminum concentration of 1% to 10%.
16. The method of claim 15 , wherein the third insulating film has an aluminum concentration of 8% or higher.
17. The method of claim 7 , wherein the third insulating film has an aluminum concentration of 16% or higher.