IP Library Granted Patent US 8,877,611
Granted Patent B2
US 8,877,611 · App. 13/715,260 · Granted Nov 4, 2014

Devices with crack stops

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Quick Facts
Patent No.
US 8,877,611
App. No.
13/715,260
Granted
Nov 4, 2014
Kind
B2
Abstract

An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.

Claims (35)

1. A method of making an apparatus comprising:

providing at least two devices on a substrate wherein the substrate has an overall thickness;

reducing the overall thickness of the substrate; and

thereafter providing at least one crack stop in the substrate.

2. The method of claim 1 , wherein the crack stop is located separate from the at least two devices.

3. The method of claim 1 , further comprising singulating the at least two devices.

4. The method of claim 1 , further comprising mounting a carrier to the at least two devices on a side opposite the substrate.

5. The method of claim 1 , wherein reducing the overall thickness of the substrate comprises etching, polishing, or grinding the substrate.

6. The method of claim 1 , wherein providing at least one crack stop comprises dry etching or wet etching.

7. The method of claim 1 , wherein providing a crack stop in the substrate is performed at the same time as providing one or more via holes through the substrate and at least one of the devices.

8. The method of claim 4 , further comprising removing the carrier substrate and sawing or breaking the substrate.

9. The method of claim 6 , wherein providing a crack stop in the substrate comprises dry etching or wet etching through a patterned mask.

10. The method of claim 7 , further comprising forming an ohmic contact to the substrate.

11. A method of making an apparatus comprising:

providing a device on a substrate;

reducing an overall thickness of the substrate; and

thereafter providing at least one crack stop in the substrate, wherein the at least one crack stop extends completely through the substrate and is aligned in a circular pattern along the perimeter of the substrate.

12. The method of claim 11 , further comprising providing at least two devices on the substrate.

13. The method of claim 11 , further comprising providing multiple crack stops aligned in one or more rows around the device.

14. The method of claim 11 , wherein providing a crack stop in the substrate is performed at the same time as providing one or more via holes through the substrate and the device.

15. The method of claim 11 , wherein the device is provided on the substrate before reducing an overall thickness of the substrate.

16. The method of claim 12 , further comprising singulating the at least two devices.

17. The method of claim 14 , further comprising forming an ohmic contact to the substrate.

18. A method of making an apparatus comprising:

providing a substrate;

providing a device on the substrate;

reducing an overall thickness of the substrate; and

thereafter providing a crack stop that is separate from the device and extends completely through the substrate.

19. The method of claim 18 , wherein providing at least one crack stop comprises dry etching or wet etching.

20. The method of claim 18 , wherein providing a crack stop in the substrate is performed at the same time as providing one or more via holes through the substrate and the device.

21. The method of claim 18 , further comprising providing at least two devices on the substrate.

22. The method of claim 18 , wherein the device is provided on the substrate before reducing an overall thickness of the substrate.

23. The method of claim 19 , wherein providing a crack stop in the substrate comprises dry etching or wet etching through a patterned mask.

24. The method of claim 20 , further comprising forming an ohmic contact to the substrate.

25. The method of claim 21 , further comprising singulating the at least two devices.

Assignments (8)
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Mar 26, 2026
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 075280/0919 →
RELEASE OF SECURITY INTEREST IN INTELLECTUAL PROPERTY COLLATERAL AT REEL/FRAME NO. 64185/0755 Recorded Sep 30, 2025
From: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: WOLFSPEED, INC.
Reel/Frame 072989/0001 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0113 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0381 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0467 →
NOTICE OF GRANT OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Sep 30, 2025
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 072992/0588 →
SECURITY INTEREST Recorded Jun 30, 2023
From: WOLFSPEED, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION
Reel/Frame 064185/0755 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2014
From: MIECZKOWSKI, VAN ALLEN; NAMISHIA, DANIEL JAMES
To: CREE, INC.
Reel/Frame 033740/0866 →