Substrate processing apparatus, method of manufacturing semiconductor device and program
Provided is a substrate processing apparatus. The substrate processing apparatus includes: a process chamber configured to accommodate a substrate; a substrate holding member configured to hold the substrate in the process chamber; a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber; a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber, wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees.
1. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate;
a substrate holding member configured to hold the substrate in the process chamber;
a first gas supply system including a first gas supply hole for supplying a first process gas into the process chamber;
a second gas supply system including a second gas supply hole for supplying a second process gas into the process chamber; and
a catalyst supply system including a catalyst supply hole for supplying a catalyst into the process chamber,
wherein an angle between a first imaginary line connecting a center of the substrate holding member and the first gas supply hole and a second imaginary line connecting the center of the substrate holding member and the catalyst supply hole ranges from 63.5 degrees to 296.5 degrees.
2. The substrate processing apparatus according to claim 1 , wherein an angle between the second imaginary line and a third imaginary line connecting the center of the substrate holding member and the second gas supply hole ranges from 63.5 degrees to 296.5 degrees.
3. The substrate processing apparatus according to claim 1 , wherein each of a distance between the first gas supply hole and the catalyst supply hole and a distance between the second gas supply hole and the catalyst supply hole is greater than a distance between the first gas supply hole and the second gas supply hole.
4. The substrate processing apparatus according to claim 1 , wherein a distance between the first gas supply hole and the catalyst supply hole and a distance between the second gas supply hole and the catalyst supply hole are substantially same.
5. The substrate processing apparatus according to claim 1 , wherein each of the first gas supply hole and the second gas supply hole is provided in a position substantially opposite to the catalyst supply hole with the substrate interposed therebetween.
6. The substrate processing apparatus according to claim 1 , wherein the first process gas comprises a silicon-containing gas, and the second process gas comprises one of an oxygen-containing gas and a nitrogen-containing gas.
7. The substrate processing apparatus according to claim 1 , wherein the catalyst is a combination of a heterocycle and nitrogen, and comprises one of pyridine, amino pyridine, picoline, piperazine and lutidine.
8. The substrate processing apparatus according to claim 1 , wherein the process chamber further accommodates a plurality of substrates, and
the first gas supply system, the second gas supply system and the catalyst supply system includes a first nozzle, a second nozzle and a third nozzle, respectively, each of the first nozzle, the second nozzle and the third nozzle extending in a stacked direction of the plurality of substrates in the process chamber, and including a plurality of supply holes provided along the stacked direction of the plurality of substrates.
9. The substrate processing apparatus according to claim 1 , wherein a surface of the substrate includes a pattern.