Semiconductor device and manufacturing method thereof
View Patent ↗Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.
1. A method of manufacturing a semiconductor device, the method comprising:
forming an interposer comprising a redistribution layer and a dielectric layer on a dummy substrate;
connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer;
encapsulating the semiconductor die in an encapsulant;
removing the dummy substrate from the interposer; and
thinning the encapsulant.
2. The method as claimed in claim 1 , wherein the dummy substrate comprises at least one of: silicon and/or glass.
3. The method as claimed in claim 1 , wherein the dielectric layer comprises at least one of: a silicon oxide layer, a silicon nitride layer, and/or a polymer layer.
4. The method as claimed in claim 1 , comprising forming a solder on the redistribution layer facing the upper portion of the interposer, and wherein said connecting a semiconductor die comprises connecting the semiconductor die to the solder.
5. The method as claimed in claim 1 , comprising, after said connecting the semiconductor die, filling an underfill between the semiconductor die and the interposer.
6. The method as claimed in claim 1 , wherein said thinning the encapsulant comprises grinding the encapsulant to expose a top surface of the semiconductor die.
7. The method as claimed in claim 1 , wherein said removing the dummy substrate comprises grinding and etching the dummy substrate to expose a portion of the redistribution layer facing a lower portion of the interposer.
8. The method as claimed in claim 1 , comprising connecting a bump to the redistribution layer facing a lower portion of the interposer, said connecting a bump comprising:
forming an under bump metal on the redistribution layer facing the lower portion of the interposer; and connecting the bump to the under bump metal.
9. The method as claimed in claim 1 , wherein said forming the interposer comprises forming an under bump metal on which at least a portion of the redistribution layer will be formed.
10. The method as claimed in claim 8 , comprising mounting the connected bump to a circuit board.
11. The method as claimed in claim 10 , comprising filling an underfill between the interposer and the circuit board.
12. The method as claimed in claim 10 , comprising attaching a cover to the circuit board to cover the semiconductor die.
13. The method as claimed in claim 1 , wherein said forming the interposer comprises:
forming a seed layer directly on the dummy substrate;
forming and patterning the redistribution layer on the seed layer;
forming the dielectric layer outside the redistribution layer; and
removing the seed layer.
14. The method as claimed in claim 1 , wherein the forming of the interposer comprises:
forming a seed layer on the dummy substrate;
forming an under bump metal directly on at least a portion of the seed layer;
forming and patterning the redistribution layer on the under bump metal;
forming the dielectric layer outside the redistribution layer; and
removing the at least a portion of the seed layer on which the under bump metal was directly formed.
15. The method as claimed in claim 14 , wherein said removing the at least a portion of the seed layer is performed after said removing the dummy substrate.
16. A method of manufacturing a semiconductor device, the method comprising:
forming an interposer comprising a redistribution layer and a dielectric layer on a dummy substrate; and
removing the dummy substrate from the interposer, wherein said removing the dummy substrate comprises grinding the dummy substrate.
17. The method as claimed in claim 16 , wherein said removing the dummy substrate comprises grinding and etching the dummy substrate to expose a portion of the redistribution layer.
18. The method as claimed in claim 16 , wherein said forming the interposer comprises forming an under bump metal on which at least a portion of the redistribution layer will be formed.
19. A method of manufacturing a semiconductor device, the method comprising:
forming an interposer comprising:
a redistribution layer and a dielectric layer; and
an under bump metal on which at least a portion of the redistribution layer is formed;
connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer;
encapsulating the semiconductor die by using an encapsulant;
thinning the encapsulant to expose a top surface of the semiconductor die; and
connecting a bump to the under bump metal.
20. The method as claimed in claim 19 , wherein said forming comprises forming the redistribution layer and the dielectric layer on a dummy substrate, the method comprising removing the dummy substrate from the interposer by, at least in part, grinding and etching the dummy substrate to expose a portion of the redistribution layer facing a lower portion of the interposer.