Methods of manufacturing semiconductor device assemblies including face-to-face semiconductor dice
Methods of manufacturing semiconductor device assemblies include attaching a back side of a first semiconductor die to a substrate and structurally and electrically coupling a first end of laterally extending conductive elements to conductive terminals on or in a surface of the substrate. Second ends of the laterally extending conductive elements are structurally and electrically coupled to bond pads on or in an active surface of the first semiconductor die. Conductive structures are structurally and electrically coupled to bond pads of a second semiconductor die. At least some of the conductive structures are aligned with at least some of the bond pads of the first semiconductor die. An active surface of the second semiconductor die faces an active surface of the first semiconductor die. At least some of the conductive structures are structurally and electrically coupled to at least some of the bond pads of the first semiconductor die.
1. A method of manufacturing a semiconductor device assembly, the method comprising:
attaching a back side of a first semiconductor die to a substrate;
structurally and electrically coupling a first end of each of a plurality of laterally extending conductive elements to one of a plurality of conductive terminals on or in a surface of the substrate;
structurally and electrically coupling a second end of each of the plurality of laterally extending conductive elements to one of a plurality of bond pads on or in an active surface of the first semiconductor die;
structurally and electrically coupling each of a plurality of conductive structures to one of a plurality of bond pads of a second semiconductor die;
aligning at least some conductive structures of the plurality with at least some of the plurality of bond pads of the first semiconductor die, an active surface of the second semiconductor die facing an active surface of the first semiconductor die;
structurally and electrically coupling the at least some conductive structures of the plurality to the at least some of the plurality of bond pads of the first semiconductor die; and
providing a plurality of vertically stacked discrete dielectric structures between the active surface of the first semiconductor die and the active surface of the second semiconductor die, a portion of each laterally extending conductive element passing between and in direct contact with one of the vertically stacked dielectric structures.
2. The method of claim 1 , wherein structurally and electrically coupling a first end of each of a plurality of laterally extending conductive elements comprises structurally and electrically coupling a first end of each of a plurality of bond wires to one of a plurality of conductive terminals on or in a surface of the substrate, and wherein structurally and electrically coupling a second end of each of the plurality of laterally extending conductive elements comprises structurally and electrically coupling a second end of each of the plurality of bond wires to one of the plurality of bond pads on or in an active surface of the first semiconductor die.
3. The method of claim 1 , further comprising structurally and electrically coupling the second end of each of the plurality of laterally extending conductive elements to one of the plurality of conductive structures.
4. The method of claim 1 , wherein providing a plurality of discrete dielectric structures comprises applying a plurality of discrete dielectric structures to the active surface of at least one of the first semiconductor die and the second semiconductor die at a wafer level.
5. The method of claim 1 , wherein providing a plurality of discrete dielectric structures comprises providing a plurality of discrete dielectric structures each comprising one of silicone, a silicone-based material, epoxy, and an epoxy-based material.
6. The method of claim 1 , wherein providing a plurality of discrete dielectric structures comprises providing a plurality of discrete dielectric structures each comprising a first discrete piece of tape attached to the active surface of the first semiconductor die and a second discrete piece of tape attached to the active surface of the second semiconductor die, a portion of each laterally extending conductive element passing between the first discrete piece of tape and the second discrete piece of tape.
7. The method of claim 6 , further comprising at least one of attaching a first discrete piece of tape to the active surface of the first semiconductor die at the wafer level and attaching a second discrete piece of tape to the active surface of the second semiconductor die at the wafer level.
8. The method of claim 1 , wherein providing a plurality of discrete dielectric structures comprises positioning each discrete dielectric structure of the plurality proximate a lateral edge of at least one of the first semiconductor die and the second semiconductor die.
9. The method of claim 1 , further comprising attaching each discrete dielectric structure to both the active surface of the first semiconductor die and the active surface of the second semiconductor die.
10. The method of claim 1 , wherein structurally and electrically coupling each of a plurality of conductive structures to one of a plurality of bond pads of a second semiconductor die comprises structurally and electrically coupling each of a plurality of solder balls to one of the plurality of bond pads of the second semiconductor die.
11. The method of claim 10 , wherein structurally and electrically coupling the at least some conductive structures of the plurality to the at least some of the plurality of bond pads of the first semiconductor die comprises reflowing at least some of the solder balls of the plurality.
12. The method of claim 1 , wherein attaching a back side of a first semiconductor die to a substrate comprises attaching a back side of the first semiconductor die to a surface of a circuit board.
13. The method of claim 1 , further comprising:
attaching a back side of a first additional semiconductor die to a back side of the second semiconductor die;
structurally and electrically coupling a first end of each of an additional plurality of laterally extending conductive elements to one of the plurality of conductive terminals on or in the surface of the substrate;
structurally and electrically coupling a second end of each of the additional plurality of laterally extending conductive elements to one of a plurality of bond pads on or in an active surface of the first additional semiconductor die;
structurally and electrically coupling each of an additional plurality of conductive structures to one of a plurality of bond pads of a second additional semiconductor die;
aligning at least some conductive structures of the additional plurality with at least some of the plurality of bond pads of the first additional semiconductor die, an active surface of the second additional semiconductor die facing an active surface of the first additional semiconductor die; and
structurally and electrically coupling the at least some conductive structures of the additional plurality to the at least some of the plurality of bond pads of the first additional semiconductor die.
14. The method of claim 1 , further comprising encapsulating the first semiconductor die and the second semiconductor die with a dielectric encapsulant material.
15. The method of claim 1 , wherein attaching a back side of a first semiconductor die to a substrate comprises attaching a plurality of first semiconductor dice to a surface of a single substrate.
16. The method of claim 15 , further comprising dicing the single substrate.
17. A method of manufacturing a semiconductor device assembly, the method comprising:
coupling a first end of each of a plurality of laterally extending conductive elements to one of a plurality of conductive terminals on or in a surface of a substrate proximate to a first semiconductor die comprising a back side mounted to the substrate;
coupling a second end of each of the plurality of laterally extending conductive elements to one of a first plurality of bond pads disposed on or in an active surface of the first semiconductor die;
coupling conductive structures to at least some of a second plurality of bond pads disposed on or in an active surface of a second semiconductor die;
aligning and coupling at least some of the conductive structures with at least some of the first plurality of bond pads of the first semiconductor die; and
providing a plurality of vertically stacked discrete dielectric structures between the active surface of the first semiconductor die and the active surface of the second semiconductor die, a portion of each laterally extending conductive element passing between and in direct contact with one of the vertically stacked dielectric structures.
18. The method of claim 17 , wherein coupling the conductive structures to at least some of the second plurality of bond pads disposed on or in the active surface of the second semiconductor die comprises coupling the conductive structures to at least some of the second plurality of bond pads that are arranged in a pattern that is substantially identical to a pattern in which the first plurality of bond pads are disposed on or in the active surface of the first semiconductor die.
19. The method of claim 17 , wherein aligning and coupling at least some of the conductive structures with at least some of the first plurality of bond pads of the first semiconductor die comprises pinning at least one of the plurality of laterally extending conductive elements between at least one of the conductive structures and at least one of the first plurality of bond pads.
20. The method of claim 17 , wherein aligning and coupling at least some of the conductive structures with at least some of the first plurality of bond pads of the first semiconductor die comprises pressing at least one of the conductive structures against one of the first plurality of bond pads at a location that is laterally adjacent to a point of coupling between one of the plurality of laterally extending conductive elements and the one of the first plurality of bond pads.