Image sensors with reflective optical cavity pixels
View Patent ↗An image sensor may be provided having a pixel array that includes optical cavity image pixels. An optical cavity image pixel may include a photosensitive element in a substrate and a reflective cavity formed from a frontside reflector that is embedded in an intermetal dielectric stack, a backside reflector formed in a dielectric layer above the photosensor that partially covers the photosensor, and sidewall reflectors formed in the substrate between adjacent photosensors using deep trench isolation techniques. Each optical cavity image pixel may also include a light-guide trench above the photosensor that guides light into the reflective cavity for that pixel. Each optical cavity pixel may also include color filter material in the trench. Light that is guided into the reflective cavity by the light-guide trench may experience multiple reflections from the reflectors of the reflective cavity before being absorbed and detected by the photosensor.
1. An optical cavity image pixel, comprising:
a substrate;
a photosensitive element formed in the substrate;
reflective structures in the substrate that at least partially surround the photosensitive element;
additional reflective structures formed on opposing sides of the substrate;
a light-guide trench that guides image light into a reflective cavity formed from the reflective structures and the additional reflective structures; and
dielectric material on a first side of the substrate, wherein a first one of the additional reflective structures is formed in the dielectric material between the photosensitive element and the light-guide trench.
2. The optical cavity image pixel defined in claim 1 , further comprising additional dielectric material formed on an opposing second side of the substrate, wherein a second one of the additional reflective structures is formed in the additional dielectric material.
3. The optical cavity image pixel defined in claim 2 , further comprising a layer of silicon formed over the dielectric material, wherein the light-guide trench has been etched into the layer of silicon.
4. The optical cavity image pixel defined in claim 2 , further comprising color filter material in the light guide trench.
5. The optical cavity image pixel defined in claim 4 wherein the color filter material comprises a colored photoresist.
6. The optical cavity image pixel defined in claim 4 wherein the color filter material comprises a plurality of thin films.
7. The optical cavity image pixel defined in claim 2 , further comprising a reflective coating on sidewall surfaces of the light-guide trench.
8. The optical cavity image pixel defined in claim 1 , further comprising an associated storage node in the substrate.
9. The optical cavity image pixel defined in claim 8 , further comprising further additional reflective structures that at least partially surround the associated storage node.
10. The optical cavity image pixel defined in claim 9 , further comprising a storage gate that transfers charge from the photosensitive element to the associated storage node.
11. The optical cavity image pixel defined in claim 1 , wherein the substrate comprises a silicon substrate and wherein the reflective structures and the photosensitive elements are formed in the silicon substrate.
12. The optical cavity image pixel defined in claim 2 , wherein the substrate has third and fourth opposing sides, wherein a first one of the reflective structures is formed on the third side of the substrate, and wherein a second one of the reflective structures is formed on the fourth side of the substrate.
13. The optical cavity image pixel defined in claim 12 , wherein the second one of the additional reflective structures has a convex reflective surface, and wherein the first one of the additional reflective structures has a concave reflective surface.
14. A system, comprising:
a central processing unit;
memory;
input-output circuitry; and
an imaging device having an array of optical cavity image pixels, wherein each optical cavity image pixel comprises:
a photosensitive element formed in a substrate;
a reflective cavity that at least partially surrounds the photosensitive element, wherein the reflective cavity comprises a frontside reflector, a backside reflector, and a plurality of vertical sidewall reflectors;
a light-guide trench that guides image light into the reflective cavity, wherein at least a portion of the backside reflector is interposed between the photosensitive element and the light-guide trench; and
dielectric material on a first side of the substrate, wherein the backside reflector is formed in the dielectric material between the photosensitive element and the light-guide trench.
15. The system defined in claim 14 wherein the imaging device further comprises an intermetal dielectric stack, and wherein the frontside reflector is embedded in the intermetal dielectric stack.
16. The system defined in claim 15 , further comprising a reflective layer formed on the surface of the light-guide trench that reflects light into the reflective cavity.
17. A method for forming an image sensor having a plurality of optical cavity image pixels, comprising:
forming photosensitive elements in a substrate;
forming vertical reflectors that are interposed between the photosensitive elements in the substrate;
forming at least one frontside reflector associated with each photosensitive element in a dielectric material on a first side of the substrate, wherein the frontside reflector has a convex reflective surface; and
forming at least one backside reflector associated with each photosensitive element in an additional dielectric material on an opposing second side of the substrate, wherein the backside reflector has a concave reflective surface.
18. The method defined in claim 17 , further comprising:
forming a layer of material over the additional dielectric material; and
etching light-guide trenches into the layer of material, wherein each of the light-guide trenches is aligned with a selected one of the photosensitive elements.