High-resolution parallel-detection sensor array using piezo-phototronics effect

1. A pressure sensor element, comprising:

(a) a substrate;

(b) a first type of semiconductor material layer disposed on the substrate;

(c) an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer along a selected axis, each piezoelectric nanostructure including a second type of semiconductor material coupled to the first semiconductor material layer thereby forming a p-n junction therebetween, each nanostructure having a bottom end electrically coupled to the first type of semiconductor material layer and a spaced apart top end;

(d) an insulative resilient medium layer infused around each of the elongated light-emitting piezoelectric nanostructures except for a top portion adjacent to the top end of each nanostructure so as to provide lateral support for the nanostructures;

(e) a transparent planar electrode disposed on the resilient medium layer and electrically coupled to the top portion of each nanostructure; and

(f) a voltage source coupled to the first type of semiconductor material layer and the transparent planar electrode and configured to apply a predetermined biasing voltage across each of the nanostructures so as to cause the nanostructures to emit light,

wherein each nanostructure is configured to emit light along the selected axis in an intensity that is proportional to an amount of compressive strain applied to each nanostructure.

2. The pressure sensor element of claim 1 , the transparent planar electrode each comprise a material selected from a group of materials consisting of: GaN, ITO, FTO, CNT, graphene and combinations thereof.

3. The pressure sensor element of claim 1 , wherein:

(a) the first type of semiconductor material includes an p-type semiconductor; and

(b) the second type of semiconductor material includes an n-type semiconductor.

4. The pressure sensor element of claim 3 , wherein the p-type semiconductor comprises GaN and wherein the n-type semiconductor comprises a nanowire that comprises a material selected from a group of materials consisting of: InN, ZnS, CdS, ZnSe, ZnO, ZnTe and combinations thereof.

5. The pressure sensor element of claim 1 , wherein the resilient medium layer comprises a material selected from a group of materials consisting of: PMMA, benzocyclobutene and combinations thereof.

6. The pressure sensor element of claim 1 , wherein the substrate comprises sapphire.

7. The pressure sensor element of claim 1 , further comprising an array of light detectors disposed adjacent to a selected one of the substrate and the transparent planar electrode, each of the light detectors configured to sense light from at least one selected one of the elongated light-emitting piezoelectric nanostructures.

8. The pressure sensor element of claim 7 , wherein the array of light detectors comprises a charge coupled device.

9. A pressure sensor, comprising:

(a) a substrate;

(b) a planar p-GaN layer disposed on the substrate;

(c) an array of elongated light-emitting piezoelectric n-zinc oxide nanowires each extending upwardly from the p-GaN layer along a selected axis, each having a bottom end electrically coupled to the p-GaN layer so as to form a p-n junction therebetween, each nanowire having a top end spaced apart from the bottom end;

(d) a layer of PMMA disposed on the planar p-GaN layer and infused into the array of the elongated light-emitting piezoelectric zinc oxide nanowires;

(e) an ITO planar electrode disposed on the layer of PMMA and electrically coupled to the top portion of each nanowire;

(f) a voltage source configured to apply a predetermined biasing voltage between the p-GaN layer and the ITO planar electrode so as to bias each of the nanowires; and

(g) an array of light sensors configured to detect light emitted by each nanowire when the nanowire is subjected to compressive strain.

10. A pressure sensor device, comprising:

(a) a substrate;

(b) a first type of semiconductor material layer disposed on the substrate;

(c) an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer along a selected axis, each piezoelectric nanostructure including a second type of semiconductor material coupled to the first semiconductor material layer thereby forming a p-n junction therebetween, each nanostructure having a bottom end electrically coupled to the first type of semiconductor material layer and a spaced apart top end;

(d) an insulative resilient medium layer infused around each of the elongated light-emitting piezoelectric nanostructures except for a top portion adjacent to the top end of each nanostructure so as to provide lateral support for the nanostructures;

(e) a transparent planar electrode disposed on the resilient medium layer and electrically coupled to the top portion of each nanostructure;

(f) a voltage source coupled to the first type of semiconductor material layer and the transparent planar electrode and configured to apply a predetermined biasing voltage across each of the nanostructures so as to cause the nanostructures to emit light, wherein each nanostructure is configured to emit light along the selected axis in an intensity that is proportional to an amount of compressive strain applied to each nanostructure; and

(g) an array of light detectors disposed adjacent to a selected one of the substrate and the transparent planar electrode, each of the light detectors configured to sense light from at least one selected one of the elongated light-emitting piezoelectric nanostructures.

11. The pressure sensor device of claim 10 , the transparent planar electrode each comprise a material selected from a group of materials consisting of: GaN, ITO, FTO, CNT, graphene and combinations thereof.

12. The pressure sensor device of claim 10 ,

wherein the first type of semiconductor material includes an p-type semiconductor; and

the second type of semiconductor material includes an n-type semiconductor.

13. The pressure sensor device of claim 12 , wherein the p-type semiconductor comprises GaN and wherein the n-type semiconductor comprises a nanowire that comprises a material selected from a group of materials consisting of: InN, ZnS, CdS, ZnSe, ZnO, ZnTe and combinations thereof.

14. The pressure sensor device of claim 10 , wherein the resilient medium layer comprises a material selected from a group of materials consisting of: PMMA, benzocyclobutene and combinations thereof.

15. The pressure sensor device of claim 10 , wherein the substrate comprises sapphire.

16. The pressure sensor device of claim 10 , wherein the array of light detectors comprises a charge coupled device.