Apparatus and methods for etching quartz substrate in photomask manufacturing applications
The present invention provides methods for etching a quartz substrate using a second level photoresist layer disposed thereon as an etching mask. In one embodiment, a method of etching a quartz substrate for forming a photomask includes providing a quartz substrate having a metal containing layer disposed thereon in an etch chamber, applying a first photoresist layer on a substrate, patterning the first photoresist layer to remove a first region of the metal containing layer to expose a first portion of the quartz substrate while remaining a second region of the metal containing layer on the quartz substrate, removing the remaining first photoresist layer on the quartz substrate, applying a second photoresist layer on the exposed quartz substrate and the second region of the metal containing layer, patterning the second photoresist layer to form openings in the second photoresist layer exposing the underlying quartz substrate, and etching the quartz substrate defined by the patterned second photoresist layer.
1. A method of etching a quartz substrate for forming a photomask, comprising:
placing a quartz substrate having a metal containing layer disposed thereon in an etch chamber;
applying a first photoresist layer on a substrate;
patterning the first photoresist layer to remove a first region of the metal containing layer to expose a first portion of the quartz substrate while a second region of the metal containing layer remains on the quartz substrate;
removing the remaining first photoresist layer on the quartz substrate;
applying a second photoresist layer on the exposed quartz substrate and the second region of the metal containing layer;
patterning the second photoresist layer to form openings in the second photoresist layer exposing the underlying quartz substrate;
etching the quartz substrate through the openings defined by the patterned second photoresist layer; and
determining an etching endpoint by using a radiation directed to the second photoresist layer disposed on the substrate during the etching process.
2. The method of claim 1 , wherein the quartz substrate is a photomask reticle.
3. The method of claim 1 , wherein the wavelength directed to the second photoresist layer disposed on the substrate having a wavelength between about 170 nm to about 770 nm.
4. The method of claim 3 , further comprising:
analyzing waveform obtained from a radiation reflected from the substrate.
5. The method of claim 4 , further comprising:
calculating fringes from the waveform to determine the etching endpoint.
6. The method of claim 3 , wherein the radiation is directed to a backside of the substrate to determine the etching endpoint.
7. The method of claim 1 , wherein the radiation is directed from a backside of the substrate to the second photoresist layer disposed on the quartz substrate.
8. The method of claim 1 , wherein the second photoresist has an extinctive coefficient greater than about 0.3.
9. The method of claim 1 , wherein a metal containing layer is a chromium containing layer.
10. The method of claim 1 , wherein the first photoresist layer is the same material as the second photoresist layer.
11. A method of etching a quartz substrate for forming a photomask, comprising:
placing a quartz substrate having a patterned metal containing layer disposed thereon in an etch chamber, the patterned metal containing layer forming opening therein exposing a portion of the quartz substrate;
applying a photoresist layer on both the metal containing layer and the quartz substrate;
patterning the photoresist layer to expose the quartz substrate;
etching the quartz substrate exposed through the patterned photoresist layer; and
directing a radiation from a backside of the substrate to the photoresist layer disposed on the substrate during the etching process.
12. The method of claim 11 , wherein etching the quartz substrate further comprises:
determining an endpoint for the etching process according to the reflected radiation detected from the backside of the substrate.
13. The method of claim 12 , wherein the radiation has a wavelength between about 170 nm to about 770 nm.
14. The method of claim 12 , wherein determining the endpoint further comprises:
analyzing waveform obtained from the reflected radiation; and
calculating fringes from the waveform to determine the etching endpoint.
15. The method of claim 14 , wherein a number of about 2 fringes as detected corresponds to a thickness low of about 150 nm.
16. The method of claim 11 , wherein the photoresist has an extinctive coefficient greater than 0.3.
17. The method of claim 11 , wherein a metal containing layer is a chromium containing layer.
18. The method of claim 11 , wherein the quartz substrate is a photomask reticle.
19. A method of etching a quartz substrate for forming a photomask, comprising:
placing a quartz substrate having a patterned metal containing layer disposed thereon in an etch chamber, the patterned metal containing layer forming opening therein exposing a portion of the quartz substrate;
applying a photoresist layer on both the metal containing layer and the quartz substrate;
patterning the photoresist layer to expose the quartz substrate;
etching the quartz substrate exposed through the patterned photoresist layer;
directing a radiation from a backside of the substrate to the photoresist layer disposed directly on the substrate, wherein the radiation has a wavelength between about 170 nm and about 770 nm; and
determining an etching endpoint according to the radiation reflected from the backside of the substrate.
20. The method of claim 19 , wherein the photoresist layer has a refractive index selected to minimize interference with the radiation directed thereto.