Granted Patent B2

US 8,921,952 · App. 13/753,034 · Granted Dec 30, 2014

Abstract

Claims (43)

1. A method for fabricating a Microelectromechanical (MEMS) device, the method comprising:

forming a sacrificial body over a substrate;

producing a multi-layer membrane structure on the substrate, wherein producing comprising:

depositing polycrystalline silicon over and around the sacrificial body to form a base membrane layer having a non-planar upper surface, a stepped outer edge portion, and a region having a non-parallel grain orientation;

removing a predetermined thickness of material from a top of the base membrane layer sufficient to eliminate the stepped outer edge portion, to remove atleast a portion of the region having the non-parallel grain orientation, and to impart the base membrane layer with a planar upper surface; and

forming a cap membrane layer over the planar upper surface of the base membrane layer, the cap membrane layer comprising polycrystalline silicon having a substantially parallel grain orientation at the interface between the cap membrane layer and the base membrane layer; and

removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure.

2. The method of claim 1 further comprising forming a channel through the multi-layer membrane structure and to the sacrificial body after forming the cap membrane layer.

3. The method of claim 2 wherein removing at least a portion of the sacrificial body comprises etching at least a portion of the sacrificial body through the channel to form the inner cavity within the multi-layer membrane structure, and wherein the method further comprises hermetically sealing the inner cavity by plugging the channel.

4. The method of claim 3 wherein the crack resistant MEMS device comprises a MEMS capacitive pressure sensor, and wherein the method further comprises creating a known reference pressure within the inner cavity prior to the hermetic sealing thereof.

5. The method of claim 1 wherein the base membrane layer is formed to include, in cross-section, first and second anchor regions located on opposing sides of the sacrificial body; and a bridge portion extending laterally between the first and second anchor regions.

6. The method of claim 5 wherein removing the predetermined thickness comprises utilizing a chemical mechanical polishing process to partially remove the bridge portion of the base membrane layer such that the sacrificial body remains enveloped by the base membrane layer subsequent to polishing.

7. The method of claim 5 wherein removing the predetermined thickness comprises utilizing a chemical mechanical polishing process to remove the bridge portion of the base membrane layer in its substantial entirety and expose the sacrificial body therethrough.

8. The method of claim 7 wherein polishing is continued beyond initial exposure of the sacrificial body to partially remove the sacrificial body and impart the sacrificial body with a planar upper surface that is substantially flush with the planar upper surface of the base membrane layer.

9. The method of claim 1 further comprising:

depositing an electrode layer over the substrate;

patterning the electrode layer to define at least one sense electrode and an interconnect line extending therefrom;

forming a dielectric layer over the substrate, the sense electrode, and the interconnect line; and

patterning the dielectric layer to create an electrode opening therein exposing the sense electrode.

10. A method for fabricating a Microelectromechanical (MEMS) device, the method comprising:

forming a sense electrode on a substrate;

depositing a sense dielectric layer over the sense electrode;

forming a sacrificial body on the dielectric layer;

building a multi-layer polysilicon membrane over the sacrificial body by forming multiple layers of polycrystalline silicon and planarizing at least one layer of polycrystalline silicon over which an additional layer of polycrystalline silicon is deposited such that at least the uppermost layer of the multi-layer polysilicon membrane is imparted with a substantially parallel grain structure;

forming at least one channel through the multi-layer polysilicon membrane to the sacrificial body;

removing at least a portion of the sacrificial body to form an inner cavity at least partially enclosed by the multi-layer polysilicon membrane; and

forming a plug in the at least one channel to hermetically seal the inner cavity.

11. The method of claim 10 wherein forming the sense electrode comprises: depositing a first layer of polycrystalline silicon on the substrate; and patterning the first layer of polycrystalline silicon to define, at least in part, the sense electrode; and

wherein building the multi-layer polysilicon membrane over the sacrificial body comprises:

forming a second layer of polycrystalline silicon over and around the sacrificial body;

removing a predetermined thickness of polycrystalline silicon from the second layer of polycrystalline silicon to impart the second layer of polycrystalline silicon with a planar upper surface; and

forming a third layer of polycrystalline silicon over the planar upper surface of the second layer of polycrystalline silicon.

12. A method for fabricating a Microelectromechanical (MEMS) device, the method comprising:

forming a polysilicon base membrane layer having a non-parallel grain region; polishing the polysilicon base membrane layer to remove a predetermined thickness therefrom sufficient to at least partially eliminate the non-parallel grain region and impart the polysilicon base membrane layer with a planarized upper surface; and

forming a polysilicon cap membrane layer over the planar upper surface of the base membrane layer, the polysilicon cap membrane layer having a substantially parallel grain orientation at the interface between the cap membrane layer and the base membrane layer.

13. The method of claim 12 wherein the polysilicon base membrane layer is formed by depositing polysilicon over and around a sacrificial body such that the polysilicon base membrane layer is imparted with at least one step feature having a step feature height, and

wherein the predetermined thickness removed from the polysilicon base membrane layer is greater than the step feature height.

14. The method of claim 12 wherein the polysilicon base membrane layer is formed by depositing polysilicon over and around a sacrificial body, and wherein the method further comprises:

forming at least one channel through the polysilicon cap membrane layer, through the polysilicon base membrane layer, and to the sacrificial body;

removing at least a portion of the sacrificial body to form an inner cavity at least partially enclosed by polysilicon cap membrane layer and the polysilicon base membrane layer; and

forming a plug in the at least one channel to hermetically seal the inner cavity.

15. The method of claim 12 wherein polishing comprises utilizing a chemical mechanical polishing process to impart the planarized upper surface of the polysilicon base membrane layer with a surface roughness less than about 0.1 micron.

16. The method of claim 12 wherein a portion of the non-parallel grain region of the polysilicon base membrane layer remains after polishing, and wherein the polysilicon cap membrane layer is formed to overlie the remaining portion of the non-parallel grain region of the polysilicon base membrane layer.

Assignments (21)