Semiconductor package having internal shunt and solder stop dimples
A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
1. A semiconductor package comprising:
first and second conductive layers on top and bottom surfaces of an insulation layer;
a semiconductor die mounted on said first conductive layer and having an electrode electrically connected to said first conductive layer;
a current sense resistor situated in an opening extending from said top surface to said bottom surface of said insulation layer, said current sense resistor electrically connected to said first and second conductive layers and to said electrode of said semiconductor die.
2. The semiconductor package of claim 1 comprising at least one via in said insulation layer, wherein said current sense resistor comprises resistive material situated in said at least one via.
3. The semiconductor package of claim 1 , wherein said current sense resistor fills said opening in said insulation layer.
4. The semiconductor package of claim 1 , wherein said electrode comprises a drain electrode of said semiconductor die.
5. The semiconductor package of claim 1 , wherein said current sense resistor electrically connects said second conductive layer to said electrode through said first conductive layer.
6. The semiconductor package of claim 1 , wherein said current sense resistor comprises a plurality of parallel shunts distributed in said insulation layer.
7. The semiconductor package of claim 1 , wherein said first conductive layer comprises a depression and said semiconductor die is situated in said depression.
8. The semiconductor package of claim 1 , wherein said insulation layer comprises ceramic.
9. The semiconductor package of claim 1 comprising a plurality of solder stop dimples formed in said first conductive layer around said semiconductor die.
10. The semiconductor package of claim 9 , wherein said solder stop dimples have a rounded bottom shape.
11. A semiconductor package comprising:
a semiconductor die situated over a first conductive layer, an insulation layer, and a second conductive layers;
said insulation layer thermally connecting said first conductive layer to said second conductive layer;
a current sensor situated in an opening extending from a top surface to a bottom surface of said insulation layer, said current sensor thermally connected to said insulation layer and electrically connecting an electrode of said semiconductor die to said second conductive layer.
12. The semiconductor package of claim 11 , wherein said current sensor comprises a current sense resistor.
13. The semiconductor package of claim 11 comprising at least one via in said insulation layer, wherein said current sensor comprises resistive material situated in said at least one via.
14. The semiconductor package of claim 11 , wherein said current sensor comprises a plurality of parallel shunts distributed in said insulation layer.
15. The semiconductor package of claim 11 , wherein said first conductive layer comprises a depression and said semiconductor die is situated in said depression.
16. The semiconductor package of claim 11 , wherein said first and second conductive layers are on top and bottom surfaces of said insulation layer.
17. The semiconductor package of claim 11 , wherein said electrode of said semiconductor die is mounted on said first conductive layer.
18. The semiconductor package of claim 11 , wherein said electrode is on a bottom surface of said semiconductor die and a top surface of said semiconductor die is substantially coplanar with a top surface of said first conductive layer.
19. The semiconductor package of claim 11 comprising a plurality of dimples formed in said first conductive layer around said semiconductor die.
20. The semiconductor package of claim 19 , wherein said dimples have a rounded bottom shape.