IP Library Granted Patent US 9,112,351
Granted Patent B2
US 9,112,351 · App. 13/759,241 · Granted Aug 18, 2015

Electrostatic discharge circuit

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,112,351
App. No.
13/759,241
Granted
Aug 18, 2015
Kind
B2
Abstract

An integrated circuit is provided. The integrated circuit may include, but is not limited to, a first node, a second node configured to be coupled to ground, an output driver, and a electrostatic discharge circuit electrically coupled to the first node, the second node, and the output driver. The electrostatic discharge circuit may include, but is not limited a high-pass filter configured to detect an electrostatic discharge event at the first node, a driving stage circuit electrically coupled to the high-pass filter and the output driver, the driving stage circuit configured to receive a signal from the high-pass filter when the high-pass filter detects the electrostatic discharge event and further configured to shunt an input of the output driver to the second node in response to the signal from the high-pass filter, and a step-down circuit electrically coupled to the driving stage circuit and configured to bias the driving stage circuit.

Claims (71)

1. An integrated circuit, comprising:

a first node configured to receive an input or an output;

a second node configured to be coupled to a reference voltage;

an output driver electrically coupled to the first node and the second node; and

a electrostatic discharge circuit electrically coupled to the first node, the second node, and the output driver, the electrostatic discharge circuit comprising:

a high-pass filter configured to detect an electrostatic discharge event at the first node;

a driving stage circuit electrically coupled to the high-pass filter and the output driver, the driving stage circuit configured to receive a signal from the high-pass filter when the high-pass filter detects the electrostatic discharge event and further configured to shunt an input of the output driver to the second node in response to the signal from the high-pass filter, the driving stage circuit comprising:

a first transistor including a gate, a source, and a drain, wherein the drain of the first transistor is coupled to the first node and the gate of the first transistor is coupled to the high-pass filter;

a second transistor including a gate, a source, and a drain, wherein the source of the second transistor is coupled to the source of the first transistor and the gate of the second transistor is coupled to the step-down circuit;

a third transistor including a gate, a source, and a drain, wherein the drain of the third transistor is coupled to the drain of the second transistor, the gate of the third transistor is coupled to the step-down circuit, and the source of the third transistor is coupled to the second node; and

a fourth transistor including a gate, a source, and a drain, wherein the gate of the fourth transistor is coupled to the drain of the second transistor, the source of the fourth transistor is coupled to the second node and the drain of the fourth transistor is coupled to the output driver;

a latch circuit electrically coupled to the driving stage circuit, the latch circuit configured to increase a rate the driving stage circuit shunts the output driver to the second node in response to the signal from the high-pass filter, the latch circuit comprising:

a fifth transistor including a gate, a source, and a drain, wherein the gate of the fifth transistor is coupled to the gate of the third transistor, a source of the fifth transistor is coupled to the second node and a drain of the fifth transistor is coupled to a gate of the first transistor;

a sixth transistor including a gate, a source, and a drain, wherein the gate of the sixth transistor is coupled to the gate of the fourth transistor, the source of the sixth transistor is coupled to the second node and the drain of the sixth transistor is coupled to the step-down circuit; and

a first resistor including a first terminal and a second terminal, wherein the first terminal of the resistor is coupled to the second node and the second terminal of the first resistor is coupled to the gate of the fourth transistor; and

a step-down circuit electrically coupled to the driving stage circuit and configured to bias the driving stage circuit.

2. The integrated circuit of claim 1 , wherein the high-pass filter comprises:

a first capacitor including a first terminal and a second terminal, wherein the first terminal of the first capacitor is coupled to the first node; and

a seventh transistor including a gate, a source, and a drain, wherein a source of the seventh transistor is coupled to the second terminal of the first capacitor and the gate and the drain of the seventh transistor are coupled to the second node.

3. The integrated circuit of claim 1 , wherein the high-pass filter comprises:

a first capacitor including a first terminal and a second terminal, wherein the first terminal of the first capacitor is coupled to the first node; and

a second resistor including a first terminal and a second terminal, wherein the first terminal of the second resistor is coupled to the second terminal of the first capacitor and the second terminal of the second resistor is coupled to the second node.

4. The integrated circuit of claim 1 , wherein the latch circuit further comprises:

a zener diode having a first terminal and a second terminal, wherein the first terminal of the zener diode is coupled to the second node and the second terminal of the zener diode is coupled to the gate of the first transistor; and

a capacitor including a first terminal and a second terminal, wherein a first terminal of the capacitor is coupled to the second node and a second terminal of the capacitor is coupled to the step-down circuit.

5. The integrated circuit of claim 1 , wherein the high-pass filter comprises:

a first capacitor including a first terminal and a second terminal, wherein the first terminal of the first capacitor is coupled to the first node and the second terminal of the first capacitor is coupled to the gate of the first transistor; and

a seventh transistor including a gate, a source, and a drain, wherein a source of the seventh transistor is coupled to the second terminal of the first capacitor and the gate and the drain of the seventh transistor are coupled to the second node.

6. The integrated circuit of claim 1 , wherein the step-down circuit comprises a voltage divider.

7. An electrostatic discharge circuit configured to be coupled to a first node, a second node, and an output driver, the electrostatic discharge circuit comprising:

a high-pass filter configured to detect an electrostatic discharge event at the first node;

a driving stage circuit electrically coupled to the high-pass filter and the output driver, the driving stage circuit configured to receive a signal from the high-pass filter when the high-pass filter detects the electrostatic discharge event and further configured to shunt an input of the output driver to the second node in response to the signal from the high-pass filter, the driving stage circuit comprising:

a first transistor including a gate, a source, and a drain, wherein the drain of the first transistor is coupled to the first node and the gate of the first transistor is coupled to the high-pass filter;

a second transistor including a gate, a source, and a drain, wherein the source of the second transistor is coupled to the source of the first transistor and the gate of the second transistor is coupled to the step-down circuit;

a third transistor including a gate, a source, and a drain, wherein the drain of the third transistor is coupled to the drain of the second transistor, the gate of the third transistor is coupled to the step-down circuit, and the source of the third transistor is coupled to the second node; and

a fourth transistor including a gate, a source, and a drain, wherein the gate of the fourth transistor is coupled to the drain of the second transistor, the source of the fourth transistor is coupled to the second node and the drain of the fourth transistor is coupled to the output driver;

a latch circuit electrically coupled to the driving stage circuit, the latch circuit configured to increase a rate the driving stage circuit shunts the output driver to the second node in response to the signal from the high-pass filter, the latch circuit comprising:

a fifth transistor including a gate, a source, and a drain, wherein the gate of the fifth transistor is coupled to the gate of the third transistor, a source of the fifth transistor is coupled to the second node and a drain of the fifth transistor is coupled to a gate of the first transistor;

a sixth transistor including a gate, a source, and a drain, wherein the gate of the sixth transistor is coupled to the gate of the fourth transistor, the source of the sixth transistor is coupled to the second node and the drain of the sixth transistor is coupled to the step-down circuit; and

a first resistor including a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the second node and the second terminal of the first resistor is coupled to the gate of the fourth transistor; and

a step-down circuit electrically coupled to the driving stage circuit and configured to bias the driving stage circuit.

8. The electrostatic discharge circuit of claim 7 , wherein the high-pass filter comprises:

a first capacitor including a first terminal and a second terminal, wherein the first terminal of the first capacitor is coupled to the first node; and

a seventh transistor including a gate, a source, and a drain, wherein a source of the first seventh transistor is coupled to the second terminal of the first capacitor and the gate and the drain of the seventh transistor are coupled to the second node.

9. The electrostatic discharge circuit of claim 7 , wherein the high-pass filter comprises:

a first capacitor including a first terminal and a second terminal, wherein the first terminal of the first capacitor is coupled to the first node; and

a second resistor including a first terminal and a second terminal, wherein the first terminal of the second resistor is coupled to the second terminal of the first capacitor and the second terminal of the second resistor is coupled to the second node.

10. The electrostatic discharge circuit of claim 7 , wherein the latch circuit further comprises:

a zener diode having a first terminal and a second terminal, wherein the first terminal of the zener diode is coupled to the second node and the second terminal of the zener diode is coupled to the gate of the first transistor; and

a first capacitor including a first terminal and a second terminal, wherein a first terminal of the first capacitor is coupled to the second node and a second terminal of the first capacitor is coupled to the step-down circuit.

11. The electrostatic discharge circuit of claim 10 , wherein the high-pass filter comprises:

a second capacitor including a first terminal and a second terminal, wherein the first terminal of the second capacitor is coupled to the first node and the second terminal of the second capacitor is coupled to the gate of the first transistor; and

a seventh transistor including a gate, a source, and a drain, wherein a source of the seventh transistor is coupled to the second terminal of the second capacitor and the gate and the drain of the seventh transistor are coupled to the second node.

12. The electrostatic discharge circuit of claim 7 , wherein the step-down circuit comprises a voltage divider.

13. A method for shunting an input of an output driver to ground, comprising:

detecting, via a high-pass filter, an electrostatic discharge event;

sending, by the high-pass filter, a signal indicating the electrostatic discharge event to a driving stage circuit, the driving stage circuit comprising:

a first transistor including a gate, a source, and a drain, wherein the drain of the first transistor is coupled to the first node and the gate of the first transistor is coupled to the high-pass filter;

a second transistor including a gate, a source, and a drain, wherein the source of the second transistor is coupled to the source of the first transistor and the gate of the second transistor is coupled to the step-down circuit;

a third transistor including a gate, a source, and a drain, wherein the drain of the third transistor is coupled to the drain of the second transistor, the gate of the third transistor is coupled to the step-down circuit, and the source of the third transistor is coupled to the second node; and

a fourth transistor including a gate, a source, and a drain, wherein the gate of the fourth transistor is coupled to the drain of the second transistor, the source of the fourth transistor is coupled to the second node and the drain of the fourth transistor is coupled to the output driver;

shunting, by the driving stage circuit, the input of the output driver to ground; and,

increasing, by a latch circuit, a rate of the shunting by the driving stage circuit by latching an input to the driving stage circuit to ground, the latch circuit comprising:

a fifth transistor including a gate, a source, and a drain, wherein the gate of the fifth transistor is coupled to the gate of the third transistor, a source of the fifth transistor is coupled to the second node and a drain of the fifth transistor is coupled to a gate of the first transistor;

a sixth transistor including a gate, a source, and a drain, wherein the gate of the sixth transistor is coupled to the gate of the fourth transistor, the source of the sixth transistor is coupled to the second node and the drain of the sixth transistor is coupled to the step-down circuit; and

a first resistor including a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the second node and the second terminal of the first resistor is coupled to the gate of the fourth transistor.

14. The method of claim 13 , further comprising increase a voltage bias in the driving stage circuit to increase a rate at which the driving stage circuit shunts the input of the output driver to ground.

15. The method of claim 14 , further comprising:

ceasing, by the high-pass filter, the signal indicating the electrostatic discharge event to the driving stage circuit when the electrostatic discharge event is over; and

ceasing, by the driving stage circuit, shunting the input of the output driver to ground when the high-pass filter ceases sending the signal.

16. The method of claim 15 , further comprising dissipating the voltage bias in the driving stage circuit to increase a rate at which the driving stage circuit ceases shunting the input of the output driver.

Assignments (21)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
MERGER Recorded Jan 3, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041144/0363 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0704 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0744 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0725 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030445/0737 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030445/0709 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030445/0581 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2013
From: CHEN, WEN-YI; GILL, CHAI EAN
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 029754/0158 →