Method of changing reflectance or resistance of a region in an optoelectronic memory device
View Patent ↗A method for changing reflectance or resistance of a region in an optoelectronic memory device. Changing the reflectance of the region includes sending an electric current through the region to cause a reflectance change in the region. Changing the resistance of the region includes: projecting a laser beam at a first beam intensity on the region, resulting in the region changing from a first to a second different resistance value; electrically reading the second resistance value during which an optical signal carried by the laser beam has a first digital value; after electrically reading the second resistance value, the laser beam is projected at a second beam intensity on the region resulting in the region changing from the second to the first resistance value; and electrically reading the first resistance value of the region while the laser beam is being projected on the region at the second beam intensity.
1. A method for changing reflectance of a region in an optoelectronic memory device, said method comprising:
sending an electric current through the region so as to cause a change in a reflectance of the region from a first value of reflectance to a second value of reflectance different from the first value of reflectance, said region comprising a material; and
optically reading the change in the reflectance of the region,
wherein said sending the electric current through the region comprises maintaining a voltage potential across the region so as to cause the change in the reflectance of the region,
wherein the first value of reflectance corresponding to no voltage potential is maintained across the region, and
wherein the second value of reflectance corresponding to the voltage potential is maintained across the region.
2. The method of claim 1 , wherein said voltage potential is such that the change in the reflectance of the region is reversible.
3. The method of claim 1 , wherein said optically reading the change in the reflectance of the region is performed while said voltage potential is being applied across the region.
4. A method for changing reflectance of a region in an optoelectronic memory device, said method comprising:
sending an electric current through the region so as to cause a change in a reflectance of the region from a first value of reflectance to a second value of reflectance different from the first value of reflectance, said region comprising a material; and
optically reading the change in the reflectance of the region,
wherein said optically reading the change in the reflectance of the region comprises:
sending a first incident laser beam to the region;
receiving a first reflected beam from the region, wherein the first reflected beam is a result of a reflection of the first incident laser beam off the region;
sending a second incident laser beam to another reference region, wherein the another reference region is essentially identical to the region;
receiving a second reflected beam from the another reference region wherein the second reflected beam is a result of a reflection of the second incident laser beam off the another reference region; and
comparing beam intensities of the first and second reflected beams.
5. A method for changing reflectance of a region in an optoelectronic memory device, said method comprising:
sending an electric current through the region so as to cause a change in a reflectance of the region from a first value of reflectance to a second value of reflectance different from the first value of reflectance, said region comprising a material; and
optically reading the change in the reflectance of the region,
wherein the change in the reflectance of the region is due to a phase change in the material.
6. The method of claim 5 , wherein the material comprises TaN.
7. The method of claim 5 , wherein said sending the electric current through the region comprises applying a voltage across the region.
8. The method of claim 7 , wherein the voltage is such that the reflectance of the region remains at the second reflectance value after the voltage is removed.
9. The method of claim 7 , wherein said optically reading the change in the reflectance of the region is performed after the voltage is removed.