Resistive switching devices and methods of formation thereof
View Patent ↗In accordance with an embodiment of the present invention, a resistive switching device includes an opening disposed within a first dielectric layer, a conductive barrier layer disposed on sidewalls of the opening, a fill material including an inert material filling the opening. A solid electrolyte layer is disposed over the opening. The solid electrolyte contacts the fill material but not the conductive barrier layer. A top electrode is disposed over the solid electrolyte.
1. A resistive switching device comprising:
an opening disposed within a first dielectric layer;
a conductive barrier layer disposed on sidewalls of the opening;
a fill material comprising an inert material filling the opening and the fill material extends above the conductive barrier layer so that a top surface of the fill material is above the conductive barrier, wherein the conductive barrier comprises a metal nitride;
a solid electrolyte layer disposed over the opening, the solid electrolyte layer contacting the fill material but not the conductive barrier layer, wherein the solid electrolyte layer overlaps with an entire top surface of the fill material and the conductive barrier layer; and
a top electrode disposed over the solid electrolyte.
2. The device of claim 1 , wherein the resistive switching device comprises a resistive metal oxide memory, a phase change memory, or a conductive bridging random access memory.
3. The device of claim 1 , wherein the resistive switching device is a one time programmable device or a field-programmable gate array.
4. The device of claim 1 , further comprising an inert liner disposed between the fill material and the conductive barrier layer, the inert liner comprising the same material as the fill material.
5. The device of claim 1 , wherein the metal nitride comprises TiN, TaN, or WN.
6. The device of claim 1 , wherein the conductive barrier layer comprises TiN, wherein the fill material comprises tungsten.
7. The device of claim 6 , wherein the top electrode comprises copper.
8. The device of claim 1 , wherein the fill material comprises a material selected from the group consisting of tungsten, titanium nitride, tantalum nitride, tungsten nitride, ruthenium, platinum, titanium tungsten (TiW), molybdenum, gold, nickel, cobalt, and iridium.
9. The device of claim 1 , wherein the top electrode comprises silver, copper, and/or zinc.
10. The device of claim 1 , wherein the solid electrolyte layer comprises a material selected from the group consisting of Ge x S y , Ge x Se y , Ge—Te, GST, As—S, SiO 2 , TiO 2 , ZrO 2 , GdO x , Ge x Se y /SiO x , Ge x Se y /Ta 2 O 5 , Cu x S/Cu x O, Cu x S/SiO 2 , WO 3 , Cu 2 S, Ta 2 O 5 , Zn x Cd 1-x S, Zn x Cd 1-x S, Zn x Cd 1-x S, aluminum oxide, and hafnium oxide.
11. The device of claim 1 , wherein the rim extends vertically underneath the solid electrolyte and along the sidewalls of the opening for about 5 nm to about 20 nm.
12. The device of claim 1 , wherein the conductive barrier layer comprises an inert material different from the fill material.
13. The device of claim 1 , wherein the conductive barrier layer comprises a nitride of at least one of tungsten, titanium, tantalum, ruthenium, titanium tungsten (TiW), and molybdenum.
14. A resistive switching device comprising:
an opening disposed within a first dielectric layer;
a conductive barrier layer disposed on sidewalls of the opening, wherein the conductive barrier comprises a metal nitride;
a fill material comprising an inert material filling the opening, wherein the fill material extends above the conductive barrier layer so that a top surface of the fill material is above the conductive barrier layer;
a solid electrolyte layer disposed over the opening, the solid electrolyte layer contacting the fill material but not the conductive barrier layer; and
a top electrode disposed over the solid electrolyte.
15. A resistive switching device comprising:
an opening disposed within a first dielectric layer;
a conductive barrier layer disposed on sidewalls of the opening, wherein the conductive barrier comprises a metal nitride;
a fill material comprising an inert material filling the opening, wherein the fill material extends above the conductive barrier layer so that a top surface of the fill material is above the conductive barrier layer;
a solid electrolyte layer disposed over the opening, the solid electrolyte layer contacting the fill material but not the conductive barrier layer, wherein the solid electrolyte layer forms a switching layer of a resistive metal oxide memory, or a conductive bridging random access memory; and
a top electrode disposed over the solid electrolyte.