Method for controlled growth of silicon carbide and structures produced by same
View Patent ↗A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
1. A silicon carbide crystal having a substantially uniform concentration of a low-solubility impurity, a substantially uniform ration from about 1 to about 3 of the low-solubility impurity to second impurity, a dimension of at least 50 mm, and a plurality of geometric volumes, each a volume of 100 mm 3 with less than or equal to 5 micropipes the silicon carbide crystal formed by a process comprising:
placing a sacrificial substrate in a chamber with a source material including the low-solubility impurity;
growing silicon carbide on the sacrificial substrate;
replacing the sacrificial substrate with a final substrate; and
growing silicon carbide on the final substrate using at least the source material to produce a silicon carbide crystal wherein the concentration of the low-solubility impurity varies by no more than on decade per centimeter.
2. The silicon carbide crystal of claim 1 wherein the low-solubility impurity comprises vanadium.
3. The silicon carbide crystal of claim 2 wherein the second impurity comprises nitrogen.
4. The silicon carbide crystal of claim 3 wherein the vanadium has a concentration of at least 5×10 16 cm −3 .
5. A semi-insulating, silicon carbide crystal having a dimension of at least 50 mm of a polytype selected from a group consisting of 6H, 4H, 15R and 3C, the semi-insulating, silicon carbide crystal comprising:
a substantially uniform concentration of a low-solubility impurity corresponding to no more than one decade per centimeter of variation, the low-solubilty impurity selected from one of periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB, VIIIB and IIIA, with a substantially uniform ratio from about 1 to about 3 of the low-solubility impurity to a second impurity; and
a plurality of 10 mm×10 mm×1 mm volumes with less than or equal to 5 micropipes.
6. The semi-insulating, silicon carbide crystal of claim 5 wherein the low-solubility impurity is one of vanadium and chromium.
7. The semi-insulating, silicon carbide crystal of claim 5 wherein the low-solubility impurity comprises vanadium at a concentration of greater than 1×10 15 cm −3 .
8. The semi-insulating, silicon carbide crystal of claim 5 wherein the low-solubility impurity comprises vanadium at a concentration of greater than or equal to 5×10 16 cm −3 , and the second impurity comprises nitrogen.
9. A semi-insulating, silicon carbide crystal having a dimension of at least 50 mm of a polytype selected from a group consisting of 6H, 4H, 15R and 3C, the semi-insulating, silicon carbide crystal comprising:
a substantially uniform concentration of a low-solubility impurity corresponding to no more than one decade per centimeter of variation, the low solubility impurity selected from one of periodic groups IB, IIB, IIIB, IVB, VB, VIB, VIIB, VIIIB and IIIA, with a substantially uniform ration from about 1 to about 3 of the low solubility impurity to a second impurity; and
a plurality of 100 mm 3 volumes with less than or equal to 5 micropipes.
10. The semi-insulating, silicon carbide crystal of claim 9 wherein the low-solubility impurity is one of vanadium and chromium.
11. The semi-insulating, silicon carbide crystal of claim 9 wherein the low-solubility impurity comprises vanadium at a concentration of greater than 1×10 15 cm −3 .
12. The semi-insulating, silicon carbide crystal of claim 9 wherein the low-solubility impurity comprises vanadium at a concentration of greater than or equal to 5×10 16 cm −3 , and the second impurity comprises nitrogen.