IP Library › Granted Patent US 8,902,374
Granted Patent B2
US 8,902,374 · App. 13/769,999 · Granted Dec 2, 2014

Display device and electronic device including the same

Inventor: Atsushi Umezaki (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3413G09G2320/0252H01L27/0629G02F1/136286G09G2310/061G09G2310/0235
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Quick Facts
Patent No.
US 8,902,374
App. No.
13/769,999
Granted
Dec 2, 2014
Kind
B2
Abstract

It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of the capacitor is connected to a wiring, and the other electrode of the capacitor is connected to a gate of the transistor. Since a clock signal is input to the wiring, the clock signal is input to the gate of the transistor through the capacitor. Then, on/off of the transistor is controlled by a signal which synchronizes with the clock signal, so that a period when the transistor is on and a period when the transistor is off are repeated. In this manner, deterioration of the transistor can be suppressed.

Claims (58)

1. A display device comprising:

a driver circuit; and

a pixel,

wherein the driver circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a capacitor,

wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to the second wiring and a second terminal of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first wiring,

wherein a first terminal of the third transistor is electrically connected to a third wiring and a second terminal of the third transistor is electrically connected to the gate of the first transistor,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to a gate of the third transistor, and a gate of the fourth transistor is electrically connected to the gate of the first transistor,

wherein one electrode of the capacitor is electrically connected to the first wiring and the other electrode of the capacitor is electrically connected to the gate of the third transistor, and

wherein each semiconductor layer of the first to fourth transistors includes an oxide semiconductor layer.

2. The display device according to claim 1 , wherein the driver circuit is formed over the same substrate as a transistor included in the pixel.

3. The display device according to claim 1 , wherein the channel width of the first transistor is larger than the channel width of each of the second transistor to the fourth transistor.

4. The display device according to claim 1 , wherein the pixel includes a liquid crystal element.

5. An electronic device comprising the display device described in claim 1 and an operation switch.

6. A display device comprising:

a driver circuit; and

a pixel,

wherein the driver circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, and a capacitor;

wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to the second wiring and a second terminal of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first wiring,

wherein a first terminal of the third transistor is electrically connected to a third wiring and a second terminal of the third transistor is electrically connected to the gate of the first transistor,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to a gate of the third transistor, and a gate of the fourth transistor is electrically connected to the gate of the first transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fourth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the first transistor, and a gate of the fifth transistor is electrically connected to the fourth wiring,

wherein a first terminal of the sixth transistor is electrically connected to the fourth wiring, a second terminal of the sixth transistor is electrically connected to the gate of the first transistor, and a gate of the sixth transistor is electrically connected to a fifth wiring,

wherein a first terminal of the seventh transistor is electrically connected to the third wiring, a second terminal of the seventh transistor is electrically connected to the second wiring, and a gate of the seventh transistor is electrically connected to the fifth wiring,

wherein a first terminal of the eighth transistor is electrically connected to the third wiring, a second terminal of the eighth transistor is electrically connected to the gate of the first transistor, and a gate of the eighth transistor is electrically connected to a sixth wiring,

wherein a first terminal of the ninth transistor is electrically connected to the third wiring, a second terminal of the ninth transistor is electrically connected to the second wiring, and a gate of the ninth transistor is electrically connected to the sixth wiring,

wherein one electrode of the capacitor is electrically connected to the first wiring and the other electrode of the capacitor is electrically connected to the gate of the third transistor, and

wherein each semiconductor layer of the first to ninth transistors includes an oxide semiconductor layer.

7. The display device according to claim 6 , wherein the driver circuit is formed over the same substrate as a transistor included in the pixel.

8. The display device according to claim 6 , wherein the channel width of the first transistor is larger than the channel width of each of the second transistor to the ninth transistor.

9. The display device according to claim 6 , wherein the pixel includes a liquid crystal element.

10. An electronic device comprising the display device described in claim 6 and an operation switch.

11. A semiconductor device comprising:

a driver circuit;

wherein the driver circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, and a capacitor,

wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to the second wiring and a second terminal of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first wiring,

wherein a first terminal of the third transistor is electrically connected to a third wiring and a second terminal of the third transistor is electrically connected to the gate of the first transistor,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to a gate of the third transistor, and a gate of the fourth transistor is electrically connected to the gate of the first transistor,

wherein one electrode of the capacitor is electrically connected to the first wiring and the other electrode of the capacitor is electrically connected to the gate of the third transistor, and

wherein each semiconductor layer of the first to fourth transistors includes an oxide semiconductor layer.

12. The semiconductor device according to claim 11 , wherein the channel width of the first transistor is larger than the channel width of each of the second transistor to the fourth transistor.

13. A semiconductor device comprising:

a driver circuit;

wherein the driver circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, and a capacitor,

wherein a first terminal of the first transistor is electrically connected to a first wiring and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to the second wiring and a second terminal of the second transistor is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically connected to the first wiring,

wherein a first terminal of the third transistor is electrically connected to a third wiring and a second terminal of the third transistor is electrically connected to the gate of the first transistor,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to a gate of the third transistor, and a gate of the fourth transistor is electrically connected to the gate of the first transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fourth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the first transistor, and a gate of the fifth transistor is electrically connected to the fourth wiring,

wherein a first terminal of the sixth transistor is electrically connected to the fourth wiring, a second terminal of the sixth transistor is electrically connected to the gate of the first transistor, and a gate of the sixth transistor is electrically connected to a fifth wiring,

wherein a first terminal of the seventh transistor is electrically connected to the third wiring, a second terminal of the seventh transistor is electrically connected to the second wiring, and a gate of the seventh transistor is electrically connected to the fifth wiring,

wherein a first terminal of the eighth transistor is electrically connected to the third wiring, a second terminal of the eighth transistor is electrically connected to the gate of the first transistor, and a gate of the eighth transistor is electrically connected to a sixth wiring,

wherein a first terminal of the ninth transistor is electrically connected to the third wiring, a second terminal of the ninth transistor is electrically connected to the second wiring, and a gate of the ninth transistor is electrically connected to the sixth wiring,

wherein one electrode of the capacitor is electrically connected to the first wiring and the other electrode of the capacitor is electrically connected to the gate of the third transistor, and

wherein each semiconductor layer of the first to ninth transistors includes an oxide semiconductor layer.

14. The semiconductor device according to claim 13 , wherein the channel width of the first transistor is larger than the channel width of each of the second transistor to the ninth transistor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2014
From: UMEZAKI, ATSUSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 033274/0727 →
Priority Claims (1)
JP 2008-304124 · Nov 28, 2008 · national
Continuity (2)
Continuation 12614852 · Nov 9, 2009
Related Publication 20130162923A1 · Jun 27, 2013