Plasma reactor with conductive member in reaction chamber for shielding substrate from undesirable irradiation
Placing a conductive member between a plasma chamber in a remote plasma reactor and a substrate to shield the substrate from irradiation of undesirable electromagnetic radiation, ions or electrons. The conductive member blocks the electromagnetic radiation, neutralizes ions and absorbs the electrons. Radicals generated in the plasma chambers flows to the substrate despite the placement of the conductive member. In this way, the substrate is exposed to the radicals whereas damages to the substrate due to electromagnetic radiations, ions or electrons are reduced or removed.
1. A method of treating a surface of a substrate or depositing a layer of material on a substrate, comprising:
injecting a first gas into a plasma chamber of a plasma reactor to generate radicals by plasma;
injecting the generated radicals into a reaction chamber of the plasma reactor via at least one perforation between the reaction chamber and the plasma chamber;
shielding the substrate from undesirable irradiation generated in the plasma chamber using an electrically conductive member placed between the at least one perforation and the substrate, the electrically conductive member configured to block straight linear paths between the plasma chamber and the substrate;
injecting, via a channel formed in the electrically conductive member, a second gas into the reaction chamber; and
injecting the radicals to a portion of the substrate passing the reaction chamber.
2. The method of claim 1 , further comprising moving the substrate to inject radicals to another portion of the substrate.
3. The method of claim 1 , further comprising connecting the electrically conductive member to ground.
4. The method of claim 1 , further comprising applying a voltage signal across electrodes defining the plasma chamber.
5. The method of claim 1 , further comprising conveying the first gas to the plasma chamber via a channel formed in the plasma reactor.
6. The method of claim 1 , further comprising discharging excess radicals or gas via at least a passage formed between a side of the reaction chamber and an exhaust port formed in the plasma reactor.
7. The method of claim 6 , wherein a distance from the substrate to a ceiling of the passage is less than ⅔ of a width of the reaction chamber and is less than ⅔ of a distance from the substrate to the at least one perforation.
8. The method of claim 6 , wherein the electrically conductive member has a curved and smooth surface.
9. The method of claim 8 , wherein the electrically conductive member has a circular cross-sectional shape.
10. The method of claim 1 , wherein the second gas comprises SiH 4 .
11. The method of claim 1 , wherein the second gas comprises at least one of CF 4 or NF 3 .
12. A method of treating a surface of a substrate or depositing a layer of material on a substrate, comprising:
injecting a first gas into a plasma chamber of a plasma reactor to generate radicals by plasma;
injecting the generated radicals into a reaction chamber of the plasma reactor via at least one perforation between the reaction chamber and the plasma chamber;
shielding the substrate from undesirable irradiation generated in the plasma chamber using a single electrically conductive rod placed between the at least one perforation and the substrate, the single electrically conductive rod having a curved and smoothed surface and configured to block straight linear paths between the plasma chamber and the substrate; and
injecting the radicals to a portion of the substrate passing the reaction chamber.
13. The method of claim 12 , further comprising moving the substrate to inject radicals to another portion of the substrate.
14. The method of claim 12 , further comprising connecting the electrically conductive rod to ground.
15. The method of claim 12 , further comprising applying a voltage signal across electrodes defining the plasma chamber.
16. The method of claim 12 , further comprising conveying the first gas to the plasma chamber via a channel formed in the plasma reactor.
17. The method of claim 12 , further comprising discharging excess radicals or gas via at least a passage formed between a side of the reaction chamber and an exhaust port formed in the plasma reactor.
18. The method of claim 17 , wherein a distance from the substrate to a ceiling of the passage is less than ⅔ of a width of the reaction chamber and is less than ⅔ of a distance from the substrate to the at least one perforation.
19. The method of claim 17 , wherein the electrically conductive rod has a circular cross-sectional shape.