Granted Patent B2

US 8,946,860 · App. 13/773,432 · Granted Feb 3, 2015

Abstract

Claims (53)

1. A semiconductor device comprising:

a collector region of semiconductor material having a first conductivity type;

a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type; and

a first doped region of semiconductor material having the second conductivity type, wherein:

the first doped region is electrically connected to the base region;

the collector region resides between the base region and the first doped region;

the collector region overlies the first doped region; and

a dopant concentration of the first doped region is greater than a dopant concentration of the collector region.

2. The semiconductor device of claim 1 , wherein the dopant concentration of the first doped region is at least ten times greater than the dopant concentration of the collector region.

3. The semiconductor device of claim 1 , wherein the collector region comprises an epitaxial layer overlying the first doped region.

4. A semiconductor device comprising:

a collector region of semiconductor material having a first conductivity type;

a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type; and

a first doped region of semiconductor material having the second conductivity type;

a support layer of semiconductor material;

a buried layer of dielectric material overlying the support layer; and

a second doped region of semiconductor material overlying the buried layer, wherein:

the first doped region is electrically connected to the base region;

the collector region resides between the base region and the first doped region; and

the collector region overlies the second doped region.

5. The semiconductor device of claim 4 , wherein the first doped region abuts the second doped region.

6. The semiconductor device of claim 5 , wherein:

a dopant concentration of the first doped region is greater than a dopant concentration of the collector region; and

a dopant concentration of the second doped region is greater than the dopant concentration of the collector region.

7. The semiconductor device of claim 1 , wherein the first doped region and the base region are physically isolated by the collector region.

8. A bipolar transistor comprising:

a buried region having a first conductivity type;

a collector region overlying the buried region, the collector region having a second conductivity type opposite the first conductivity type;

a base region within the collector region, the base region having the first conductivity type, wherein at least a first portion of the collector region resides between the base region and the buried region; and

a sinker region having the first conductivity type, wherein:

the sinker region abuts the buried region;

at least a second portion of the collector region resides between the sinker region and the base region; and

the sinker region is electrically connected to the base region.

9. The bipolar transistor of claim 8 , wherein the sinker region laterally surrounds the collector region.

10. The bipolar transistor of claim 8 , wherein a dopant concentration of the collector region is less than a dopant concentration of the buried region.

11. The bipolar transistor of claim 10 , wherein the dopant concentration of the collector region is less than a dopant concentration of the sinker region.

12. The bipolar transistor of claim 8 , wherein the dopant concentration of the collector region is less than a dopant concentration of the sinker region.

13. The bipolar transistor of claim 8 , further comprising an emitter region within the base region, the emitter region having the second conductivity type.

14. A semiconductor device comprising:

a collector region of semiconductor material having a first conductivity type;

a sinker region of semiconductor material having a second conductivity type opposite the first conductivity type, wherein the sinker region laterally surrounds the collector region;

a base region of semiconductor material having the second conductivity type within the collector region, at least a first portion of the collector region resides between the sinker region and the base region;

an emitter region of semiconductor material within the base region, the emitter region having the first conductivity type; and

a buried region of semiconductor material having the second conductivity type, wherein:

the collector region overlies the buried region;

the sinker region abuts the buried region;

the sinker region and the buried region are electrically connected to the base region; and

at least a second portion of the collector region resides between the base region and the buried region.

15. The semiconductor device of claim 14 , wherein:

a dopant concentration of the buried region is greater than a dopant concentration of the collector region; and

a dopant concentration of the sinker region is greater than the dopant concentration of the collector region.

16. The semiconductor device of claim 15 , wherein a dopant concentration of the base region is greater than the dopant concentration of the collector region.

17. The semiconductor device of claim 14 , wherein the second portion is beneath the emitter region.

Assignments (21)