Integrated circuit devices including interconnections insulated by air gaps and methods of fabricating the same

1. A semiconductor device comprising:

interconnections extending in a first direction on a substrate, the interconnections spaced apart from each other in a second direction different than the first direction;

barrier dielectric patterns on top surfaces of the interconnections, respectively;

respective spacers including a top portion on each of the barrier dielectric patterns and sidewall portions on upper sidewalls of each of the interconnections; and

an upper interlayer dielectric layer on the interconnections,

wherein the upper sidewalls of the interconnections are free of the barrier dielectric patterns, and

wherein an air gap is defined between adjacent ones of the interconnections.

2. The semiconductor device of claim 1 ,

wherein the top portion of the respective spacers extends between each of the barrier dielectric patterns and the upper interlayer dielectric layer, and

wherein the sidewall portions of each of the spacers extend toward the substrate beyond the top surface of the interconnection thereon.

3. The semiconductor device of claim 2 , wherein a distance between adjacent ones of the spacers is less than a distance between the adjacent ones of the interconnections.

4. The semiconductor device of claim 2 , wherein the air gap is bounded by the spacers, the interconnections, and the upper interlayer dielectric layer.

5. The semiconductor device of claim 1 , further comprising:

a mold layer on the substrate,

wherein the interconnections are on the mold layer, and wherein portions of the interconnections extend through the mold layer.

6. The semiconductor device of claim 1 , wherein the barrier dielectric patterns include silicon nitride, metal nitride, and/or cobalt.

7. The semiconductor device of claim 2 , wherein the spacers include silicon nitride (SiN), silicon oxynitride (SiON), silicon carbide (SiC), silicon carbon nitride (SiCN), titanium (Ti), tantalum (Ta), titanium nitride (TiN), and/or tantalum nitride (TaN).

8. The semiconductor device of claim 1 , further comprising:

a plurality of cell strings on the substrate, each of the cell strings including a string selection transistor, a ground selection transistor, and a plurality of cell transistors connected in series between the string and ground selection transistors;

wherein the interconnections are electrically connected to drains of the string selection transistors, respectively.

9. The semiconductor device of claim 8 , further comprising:

a spacer on each of the barrier dielectric patterns and on upper portions of opposing sidewalls of each of the interconnections.

10. The semiconductor device of claim 8 , wherein the string selection transistor, the cell transistors, and the ground selection transistor of each cell string are horizontally or vertically arranged on a surface of the substrate.

11. The semiconductor device of claim 1 , wherein the spacers are insulating spacers.

12. An integrated circuit device, comprising:

a plurality of conductive interconnections extending substantially parallel along a substrate and spaced apart from one another by respective air gaps therebetween;

an upper dielectric layer on the plurality of interconnections; and

respective barrier dielectric layers between the conductive interconnections and the upper dielectric layer; and

respective insulating spacer layers on the conductive interconnections between the barrier dielectric layers and the upper dielectric layer.

13. The device of claim 12 , wherein the respective air gaps continuously extend from a sidewall of one of the conductive interconnections to a sidewall of another of the conductive interconnections adjacent thereto without portions of the upper dielectric layer therebetween.

14. The device of claim 12 ,

wherein the respective spacer layers extend toward the substrate along sidewalls of the conductive interconnections beyond respective surfaces thereof including the barrier dielectric layers thereon.

15. The device of claim 14 , wherein the sidewalls of the conductive interconnections are free of the barrier dielectric layers, and wherein the respective air gaps are bounded by the spacer layers, the sidewalls of adjacent ones of the interconnections, and the upper dielectric layer.

16. The device of claim 12 , further comprising:

a plurality of cell strings on the substrate, each of the cell strings including a string selection transistor, a ground selection transistor, and a plurality of cell transistors connected in series therebetween;

wherein the conductive interconnections comprise bit lines of a non-volatile integrated circuit memory device that are electrically connected to drain regions of the string selection transistors, respectively.

17. An integrated circuit device, comprising:

a plurality of conductive interconnections extending substantially parallel along a substrate and spaced apart from one another by respective air gaps therebetween;

an upper dielectric layer on the plurality of interconnections;

respective barrier dielectric layers between the conductive interconnections and the upper dielectric layer;

a mold layer including a plurality of openings therein, wherein portions of respective ones of the conductive interconnections extend through respective ones of the openings; and

a blocking dielectric pattern between the conductive interconnections and the mold layer, wherein the blocking dielectric pattern has an etch selectivity with respect to the mold layer.