RESURF semiconductor device charge balancing
View Patent ↗Breakdown voltage BVdss is enhanced and ON-resistance reduced in RESURF devices, e.g., LDMOS transistors, by careful charge balancing, even when body and drift region charge balance is not ideal, by: (i) providing a plug or sinker near the drain and of the same conductivity type extending through the drift region at least into the underlying body region, and/or (ii) applying bias Viso to a surrounding lateral doped isolation wall coupled to the device buried layer, and/or (iii) providing a variable resistance bridge between the isolation wall and the drift region. The bridge may be a FET whose source-drain couple the isolation wall and drift region and whose gate receives control voltage Vc, or a resistor whose cross-section (X, Y, Z) affects its resistance and pinch-off, to set the percentage of drain voltage coupled to the buried layer via the isolation wall.
1. A RESURF device, comprising:
a body region of a first conductivity type having a portion extending to a first surface and to a first depth from the first surface and having a buried layer of a second opposite conductivity type underlying the body region;
a source region of the second opposite conductivity type in the body region proximate the first surface;
a drift region of the second opposite conductivity type in the body region spaced apart from the source region and having a portion extending to the first surface and to a second depth less than the first depth;
a drain region of the second opposite conductivity type in the drift region, spaced apart from the body region and proximate the first surface, wherein a side of the drain region facing the source region defines a lateral extent of the drain region; and
a plug region of the second, opposite conductivity type, wherein an entirety of the plug region is lower than a bottom of the drain region and above the buried layer, the plug region vertically extends to a depth exceeding the second depth, a first portion of the plug region laterally extends into the drift region beyond the lateral extent of the drain region, and a second portion of the plug region that is distinct from the first portion also laterally extends into the drift region beyond the lateral extent of the drain region, thus increasing an effective drain area in a direction perpendicular to Ids current flow.
2. The device of claim 1 , wherein the plug region extends into but not through the body region.
3. The device of claim 2 , wherein the plug region extends into the body region to within about 0.1 to 2 micrometers of the buried layer.
4. The device of claim 1 , wherein the plug region has a doping level intermediate between a doping level of the drift region and the drain region.
5. The device of claim 1 , wherein the plug region has a graded doping density that deceases with depth from the first surface.
6. The device of claim 1 , wherein the buried layer underlies the body region.
7. The device of claim 1 , further comprising:
a dielectric region within the drift region and between the source region and the drain region, wherein the plug region extends partially underneath the dielectric region.
8. The device of claim 1 , wherein the depth of the plug region is less than a depth of the buried layer, so that a portion of the body region is located between the plug region and the buried layer.
9. The device of claim 1 , wherein the plug region further includes a third portion that does not extend into the drift region beyond the lateral extent of the drain region, wherein the third portion connects the first portion and the second portion, giving the plug region a lateral outline that has a corrugated shape.
10. The device of claim 1 , wherein the first portion and the second portion define the plug region to have a lateral shape of isolated rectangles.
11. A RESURF device comprising:
a body region of a first conductivity type, having a portion extending to a first surface and to a first depth from the first surface;
a source region of the second opposite conductivity type in the body region proximate the first surface;
a drift region of the second opposite conductivity type in the body region spaced apart from the source region and having a portion extending to the first surface and to a second depth less than the first depth;
a drain region of the second opposite conductivity type in the drift region, spaced apart from the body region and proximate the first surface, wherein a side of the drain region facing the source region defines a lateral extent of the drain region; and
a plug region of the second, opposite conductivity type, wherein an entirety of the plug region is lower than a bottom of the drift region, the plug region vertically extends to a third depth between the first depth and the second depth, and the plug region includes a first portion that extends into the drift region to a first lateral extent that is beyond the lateral extent of the drain region, and a second portion connected to the first portion that extends into the drift region to a second lateral extent that is not beyond the lateral extent of the drain region, thus increasing an effective drain area in a direction perpendicular to Ids current flow.
12. The device of claim 11 , wherein the plug region further includes a third portion that extends into the drift region to a third lateral extent that is beyond the lateral extent of the drain region, wherein the second portion connects the first portion and the third portion, giving the plug region a lateral outline that has a corrugated shape.
13. The device of claim 11 , wherein the second lateral extent is before the lateral extent of the drain region.
14. The device of claim 11 , wherein the plug region has a lateral outline with a corrugated shape.
15. The device of claim 11 , wherein the plug region has a lateral outline with a globular shape.