IP Library Granted Patent US 9,190,708
Granted Patent B2
US 9,190,708 · App. 13/785,482 · Granted Nov 17, 2015

System for reducing electromagnetic induction interference

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Quick Facts
Patent No.
US 9,190,708
App. No.
13/785,482
Granted
Nov 17, 2015
Kind
B2
Abstract

An electromagnetic band gap device is provided, comprising: a conductive plane; a non-conductive substrate located over the conductive plane; and an electromagnetic band gap unit cell that includes a first via located in the non-conductive substrate and filled with a conductive material, a second via located in the non-conductive substrate and filled with the conductive material, a first conductive surface located on the non-conductive substrate over the first via, and a second conductive surface located on the non-conductive substrate over the second via, wherein the electromagnetic band gap unit cell is configured to operate as an LC resonant circuit in conjunction with the conductive plane, at least one gap is located in the electromagnetic band gap unit cell, the at least one gap being located in the first via, in the first conductive surface, in the second conductive surface, and in the second via.

Claims (70)

1. A device, comprising:

a conductive plane configured to propagate electro-magnetic fields in a first direction, and to have a magnetic field in a second direction perpendicular to the first direction;

a non-conductive substrate located over the conductive plane; and

at least one electromagnetic band gap unit cell, the at least one electromagnetic band gap unit cell including

a first via located in the non-conductive substrate, the first via being filled with a conductive material,

a second via located in the non-conductive substrate, the second via being filled with the conductive material,

a first conductive surface located on the non-conductive substrate over the first via, and

a second conductive surface located on the non-conductive substrate over the second via,

wherein

the first and second vias are arranged to form a line in the first direction,

the at least one electromagnetic band gap unit cell is configured to operate as an LC resonant circuit in conjunction with the conductive plane,

wherein at least one gap is located in the at least one electromagnetic band gap unit cell, the at least one gap being located: between the conductive plane and the first via, in the first via, between the first via and the first conductive surface, in the first conductive surface, in the second conductive surface, between the second conductive surface and the second via, in the second via, or between the second via and the conductive plane.

2. The device of claim 1 , wherein the non-conductive layer comprises a non Conductive dielectric material.

3. The device of claim 1 , wherein the gap is a non-conductive gap that comprises one of:

air, vacuum, or a non-conductive dielectric material.

4. The device of claim 1 , wherein the at least one electromagnetic band gap unit cell comprises a plurality of electromagnetic band gap unit cells arranged in the first direction to form an electromagnetic band gap cell row.

5. The device of claim 1 , wherein the at least one electromagnetic band gap unit cell comprises a plurality of electromagnetic band gap unit cells arranged in an array having rows extending in the first direction and columns extending in the second direction to form an electromagnetic band gap cell array.

6. The device of claim 4 , further comprising:

a top layer located over the non-conductive layer,

wherein

a non-conductive gap is located between the non-conductive layer and the top layer.

7. The device of claim 4 , wherein each individual electromagnetic band gap unit cell in the electromagnetic band gap unit cell row has an orientation that differs from a reference line by a random angular difference around a center point of the individual electromagnetic band gap unit cell.

8. The device of claim 1 , wherein the at least one gap is located: between the first via and the first conductive surface, between the first conductive surface and the second conductive surface, or between the second conductive surface and the second via, in the second via.

9. The device of claim 1 , further wherein a plurality of gaps are located in the electromagnetic band gap unit cell, the plurality of gaps being located in at least two of: between the conductive plane and the first via, in the first via, between the first via and the first conductive surface, in the first conductive surface, between the first conductive surface and the second conductive surface, in the second conductive surface, between the second conductive surface and the second via, in the second via, or between the second via and the conductive plane.

10. The device of claim 1 , wherein the non-conductive substrate has a thickness under 200 μm.

11. An array, comprising:

a conductive plane configured to propagate electro-magnetic fields in a first direction, and to have a magnetic field in a second direction perpendicular to the first direction;

a non-conductive substrate located over the conductive plane; and

a plurality of electromagnetic band gap cells located in a regular array in the non-conductive substrate,

wherein

each electromagnetic band gap unit cell includes

a first via located in the non-conductive substrate, the first via being filled with a conductive material,

a second via located in the non-conductive substrate, the second via being filled with the conductive material,

a first conductive surface located on the non-conductive substrate over the first via, and

a second conductive surface located on the non-conductive substrate over the second via,

the first and second vias are arranged to form a line in the first direction,

each electromagnetic band gap unit cell is configured to operate as an LC resonant circuit in conjunction with the conductive plane, and

at least one gap is located in each electromagnetic band gap unit cell, the at least one gap being located in at least one of the group consisting of: between the conductive plane and the first via, in the first via, between the first via and the first conductive surface, in the first conductive surface, in the second conductive surface, between the second conductive surface and the second via, in the second via, or between the second via and the conductive plane.

12. The array of claim 11 , wherein

a first group of electromagnetic band gap unit cells from among the plurality of electromagnetic band gap unit cells have at least one gap located according to a first configuration, and

a second group of electromagnetic band gap unit cells from among the plurality of electromagnetic band gap unit cells have at least one gap located according to a second configuration that is different from the first configuration.

13. The array of claim 11 , wherein the gap is a non-conductive gap that comprises one of:

air, vacuum, or a non-conductive dielectric material.

14. The array of claim 11 , wherein the non-conductive substrate has a thickness under 200 μm.

15. The array of claim 14 , further comprising:

a top layer located over the non-conductive layer,

wherein

a non-conductive gap is located between the non-conductive layer and the top layer.

16. The array of claim 11 , further wherein in each electromagnetic band gap cell, a plurality of gaps are located in the electromagnetic band gap unit cell, the plurality of gaps being located in at least two of the group consisting of: between the conductive plane and the first via, in the first via, between the first via and the first conductive surface, in the first conductive surface, between the first conductive surface and the second conductive surface, in the second conductive surface, between the second conductive surface and the second via, in the second via, or between the second via and the conductive plane.

17. A method of making a device, comprising:

forming a conductive plane;

forming a non-conductive substrate;

forming a first via in the non-conductive substrate, the first via being filled with a conductive material;

forming a second via in the non-conductive substrate, the second via being filled with the conductive material;

forming a first conductive surface on the non-conductive substrate over the first via;

forming a second conductive surface on the non-conductive substrate over the second via; and

forming at least one gap either between the conductive plane and the first via, in the first via, between the first via and the first conductive surface, in the first conductive surface, in the second conductive surface, between the second conductive surface and the second via, in the second via, or between the second via and the conductive plane,

wherein

the non-conductive substrate is located adjacent to the conductive plane,

the first and second vias are arranged to form a line in a first direction,

the first via, the second via, the first conductive surface, and the second conductive surface form an electromagnetic band gap unit cell, and

the electromagnetic band gap unit cell is configured to operate as an LC resonant circuit in conjunction with the conductive plane.

18. The method of claim 17 , wherein the gap is a non-conductive gap that comprises one of the group consisting of: air, vacuum, or a non-conductive dielectric material.

19. The method of claim 17 , wherein the operations of forming the first via, forming the second via, forming the first conductive surface, and forming the second conductive surface on the non-conductive substrate over the second via are repeated a plurality of times to form a row of electromagnetic band gap cells.

20. The method of claim 19 , when the operations of forming the first via, forming the second via, forming the first conductive surface, and forming the second conductive surface on the non-conductive substrate over the second via are repeated a plurality of times, the repetitions are conducted at the same time as each other.

21. The method of claim 19 , wherein in the operation of forming the second via, the second via is formed such that a line between the center of the first via and the center of the second via is rotated a random angular amount with respect to a reference line.

22. The method of claim 17 , wherein the operations of forming a first via, forming a second via, forming a first conductive surface, and forming a second conductive surface on the non-conductive substrate over the second via are repeated a plurality of times to form an array of electromagnetic band gap cells.

23. The method of claim 22 , when the operations of forming a first via, forming a second via, forming a first conductive surface, and forming a second conductive surface on the non-conductive substrate over the second via are repeated a plurality of times, the repetitions are conducted at the same time as each other.

24. The method of claim 17 , further comprising forming a plurality of gaps in at least two of: between the conductive plane and the first via, in the first via, between the first via and the first conductive surface, in the first conductive surface, between the first conductive surface and the second conductive surface, in the second conductive surface, between the second conductive surface and the second via, in the second via, or between the second via and the conductive plane.

25. The method of claim 17 , wherein the non-conductive substrate is formed to have a thickness under 200 μm.

Assignments (31)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
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To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
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From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
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CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
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RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
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To: NXP B.V.
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RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
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To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
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