MIIIM DIODE HAVING LANTHANUM OXIDE
A MIIIM diode and method of fabricating are disclosed. In one aspect, the MIIIM diode comprises a first metal electrode, a first region comprising a first insulator material having an interface with the first metal electrode, a second region comprising a second insulator material having an interface with the first insulator material, a third region comprising a third insulator material having an interface with the second insulator material, and a second metal electrode having an interface with the third insulator material. At least one of the first, second, or third insulator materials is lanthanum oxide.
1 . A metal-insulator diode comprising:
a first metal electrode;
a first region comprising a first insulator material having an interface with the first metal electrode;
a second region comprising a second insulator material having an interface with the first insulator material;
a third region comprising a third insulator material having an interface with the second insulator material; and
a second metal electrode having an interface with the third insulator material, at least one of the first, second, or third insulator materials is lanthanum oxide.
2 . The diode of claim 1 , wherein:
at least one of the first insulator material, the second insulator material, or the third insulator material is hafnium oxide.
3 . The diode of claim 1 , wherein the first insulator material is hafnium oxide and the second insulator material is lanthanum oxide.
4 . The diode of claim 3 , wherein the third insulator material is silicon oxide.
5 . The diode of claim 3 , wherein the first region is approximately 10 angstroms thick and the second region is approximately 20 angstroms thick.
6 . The diode of claim 1 , wherein the first insulator material is lanthanum oxide and the second insulator material is hafnium oxide.
7 . The diode of claim 5 , wherein the first region is approximately 20 angstroms thick and the second region is approximately 10 angstroms thick.
8 . The diode of claim 1 , wherein the first metal electrode has a higher work function than a work function of the second metal electrode.
9 . A method for forming a metal-insulator diode comprising:
forming a first metal electrode;
forming a first region comprising a first insulator material having an interface with the first metal electrode;
forming a second region comprising a second insulator material having an interface with the first insulator material;
forming a third region comprising a third insulator material having an interface with the second insulator material; and
forming a second metal electrode having an interface with the third insulator material, at least one of the first, second, or third insulator materials is lanthanum oxide.
10 . The method of claim 9 , wherein:
at least one of the first insulator material, the second insulator material, or the third insulator material is hafnium oxide.
11 . The method of claim 9 , wherein the first insulator material is hafnium oxide and the second insulator material is lanthanum oxide.
12 . The method of claim 11 , wherein the first region is approximately 10 angstroms thick and the second region is approximately 20 angstroms thick
13 . The method of claim 9 , wherein the third insulator material is silicon oxide.
14 . The method of claim 9 , wherein the first insulator material is lanthanum oxide and the second insulator material is hafnium oxide.
15 . The method of claim 14 , wherein the first region is approximately 20 angstroms thick and the second region is approximately 10 angstroms thick.
16 . The method of claim 9 , wherein the first metal electrode has a higher work function than a work function of the second metal electrode.
17 . The method of claim 9 , further comprising forming a memory element electrically coupled to the diode in series.
18 . A non-volatile storage element, comprising:
a metal-insulator-insulator-insulator-metal (MIIIM) diode, including:
a first electrode comprising a first metal;
a first region comprising a first insulating material, the first insulating material is hafnium oxide;
a second region comprising a second insulating material;
a third region comprising a third insulating material, the third insulating material is lanthanum oxide, the hafnium oxide has an interface to the lanthanum oxide; and
a second electrode comprising a second metal, the first region, the second region, and the third region reside between the first electrode and the second electrode; and
a state change element electrically coupled to the MIIIM diode in series.
19 . The diode of claim 18 , wherein the third region is between the first region and the second region.
20 . The diode of claim 18 , wherein the first region is between the second region and the third region.