IP Library Granted Patent US 8,921,798
Granted Patent B2
US 8,921,798 · App. 13/789,156 · Granted Dec 30, 2014

Defect inspection apparatus and defect inspection method

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Quick Facts
Patent No.
US 8,921,798
App. No.
13/789,156
Granted
Dec 30, 2014
Kind
B2
Abstract

Method for realizing an inspection with short wavelength, high power light source and large numerical aperture, high performance optics to improve defect inspection sensitivity is disclosed. Short wavelength high power laser is realized by using a pulse oscillation type laser suitable for generation of high output power in a short-wavelength region, In addition, a spectral bandwidth of the laser is narrowed down so that amount of chromatic aberration of detection optics with single glass material (i.e. without compensation of chromatic aberration) is lowered to permissible level. Using highly workable glass material to construct the detection optics enables necessary surface accuracy or profile irregularity conditions to be met, even if the number of lenses is increased for large NA or the lens doesn't have a rotationally symmetrical aperture.

Claims (38)

1. A defect inspection apparatus comprising:

a pulsed laser light source for emitting ultraviolet light;

illumination optics for irradiating with the ultraviolet light a surface of a sample;

first detection optics for forming a first enlarged image of the surface of the sample;

an image sensor for detecting light back-scattered on the surface of the sample to acquire the first enlarged image of the sample; and

an image processing unit for processing the first enlarged image of the sample;

wherein:

the pulsed laser light source comprises:

a mode-locked laser as an oscillator;

a band pass filter for narrowing a spectral bandwidth of light from the mode-locked laser;

an amplifier disposed posterior to the band pass filter; and

a wavelength converter configured to convert light amplified by the amplifier into the ultraviolet light;

the spectral bandwidth of the light narrowed down by the band pass filter falls within a light-spectral bandwidth range permissible according to a particular chromatic aberration level of the illumination optics and a particular chromatic aberration level of the first detection optics; and

the spectral bandwidth of the ultraviolet light output from the pulsed laser light source is between 10 pm and 20 pm.

2. The defect inspection apparatus according to claim 1 , wherein:

the first detection optics uses only synthetic silica as a glass material.

3. The defect inspection apparatus according to claim 2 , wherein:

a lens with rotationally asymmetric aperture is used for the first detection optics.

4. The defect inspection apparatus according to claim 1 , wherein:

a lens whose numerical aperture at the sample side exceeds 0.5 is used for the first detection optics.

5. The defect inspection apparatus according to claim 1 , wherein:

the pulsed laser light source is a laser which uses pulse-driven semiconductor laser light as a fundamental wave.

6. A defect inspection method comprising:

emitting light from a mode-locked laser as an oscillator;

narrowing a spectral bandwidth of the light from the mode-locked laser by a band pass filter;

amplifying the light from the band pass filter by an amplifier disposed posterior to the band pass filter;

converting the light amplified by the amplifier into ultraviolet light by a wavelength converter;

emitting the ultraviolet light of a narrowed wavelength from a pulsed laser light source;

using illumination optics to irradiate with the ultraviolet light a surface of a sample;

using first detection optics to form a first enlarged image of the surface of the sample;

acquiring the first enlarged image via an image sensor by detecting light back-scattered on the surface of the sample, and after processing of the first enlarged image, detecting defects on the sample; and

controlling a spectral bandwidth of the light narrowed down by the band pass filter to fall within a light-spectral bandwidth range permissible according to a particular chromatic aberration level of the illumination optics and a particular chromatic aberration level of the first detection optics;

wherein the spectral bandwidth of the ultraviolet light output from the pulsed laser light source is between 10 pm and 20 pm.

7. The defect inspection apparatus according to claim 1 , further comprising:

second detection optics for forming a second enlarged image of the surface of the sample; wherein:

the first detection optics detects first light scattered at first scattering angle range,

the second detection optics detects second light scattered at second scattering angle range which is different from the first scattering angle range, and

the spectral bandwidth falls within the light-spectral bandwidth range permissible according to the particular chromatic aberration level of the illumination optics, the particular chromatic aberration level of the first detection optics, and a particular chromatic aberration level of the second detection optics.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2013
From: SHIMURA, KEI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 030192/0658 →