Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films
Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.
1. A metal oxide thin film transistor device comprising a substrate, a gate conductor, source-drain contacts, and an inorganic-organic hybrid thin film composition comprising an inorganic semiconductor layer coupled to an organic layer, wherein the inorganic semiconductor layer is a channel layer and comprises a metal oxide comprising indium.
2. The device of claim 1 , wherein the inorganic semiconductor layer comprises a metal oxide comprising indium and one or more metals independently selected from a Group 12 metal, a Group 13 metal, and a Group 14 metal.
3. The device of claim 1 , wherein the organic layer comprises chemical moieties that can promote substrate sorption, condensation, or intermolecular crosslinking.
4. The device of claim 1 , wherein the organic layer comprises hydrolyzable moieties.
5. The device of claim 1 , wherein the organic layer comprises a polymeric component, a π-polarizable component, or a combination thereof.
6. The device of claim 5 , wherein the organic layer comprises a polymeric component comprising a polymer selected from poly(vinylphenol), polystyrene, and copolymers thereof.
7. The device of claim 5 , wherein the organic layer comprises a polymer blend, the polymer blend comprising a polymeric component and a component promoting substrate sorption, condensation, or intermolecular crosslinking.
8. The device of claim 5 , wherein the organic layer comprises a π-polarizable component that is coupled to at least one of a silyl moiety and a siloxane moiety.
9. The device of claim 8 , wherein the π-polarizable component comprises a non-linear optical chromophore.
10. The device of claim 5 , wherein the organic layer comprises a multi-layered composition, the multi-layered composition comprising periodically alternating layers of different materials.
11. The device of claim 10 , wherein at least some of the periodically alternating layers are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix.
12. The device of claim 1 , wherein the substrate comprises a transparent material and is coupled to the inorganic-organic hybrid thin film composition.
13. The device of claim 12 , wherein the device is a completely transparent thin film transistor device.
14. The device of claim 1 , wherein the substrate comprises a flexible plastic material and is coupled to the inorganic-organic hybrid thin film composition.
15. The device of claim 14 , wherein the device is bendable up to a bending radius of curvature of about 4 cm without residual effects.
16. The device of claim 1 , wherein the inorganic semiconductor layer is physically adhered to the organic layer.
17. The device of claim 1 , wherein the inorganic semiconductor layer is physically adhered to the organic layer by adsorption.
18. The device of claim 1 , wherein the organic layer is chemically bonded to the inorganic semiconductor layer.
19. The device of claim 1 , wherein the device operates at an operating voltage (V G ) between about 1 V and about 20 V.
20. The device of claim 1 , wherein the device exhibits a field-effect mobility of greater than about 100 cm 2 V −1 s −1 at an operating voltage (V G ) between about 1 V and about 2 V.