Semiconductor device with integrated electrostatic discharge (ESD) clamp
View Patent ↗A device includes a substrate, a body region in the substrate and having a first conductivity type, source and drain regions in the substrate, having a second conductivity type, and spaced from one another to define a conduction path that passes through the body region, a doped isolating region in the substrate, having the second conductivity type, and configured to surround a device area in which the conduction path is disposed, an isolation contact region in the substrate, having the second conductivity type, and electrically coupled to the doped isolating region to define a collector region of a bipolar transistor, and first and second contact regions within the body region, having the first and second conductivity types, respectively, and configured to define a base contact region and an emitter region of the bipolar transistor, respectively.
1. A semiconductor device comprising:
a substrate;
a body region in the substrate and having a first conductivity type;
source and drain regions in the substrate, having a second conductivity type, and spaced from one another to define a conduction path that passes through the body region;
a doped isolating region in the substrate, having the second conductivity type, and configured to surround a device area in which the conduction path is disposed;
an isolation contact region in the substrate, having the second conductivity type, and electrically coupled to the doped isolating region to define a collector region of a bipolar transistor; and
first and second contact regions within the body region, having the first and second conductivity types, respectively, and configured to define a base contact region and an emitter region of the bipolar transistor, respectively;
wherein the doped isolating region and the body region are spaced from one another to establish a first breakdown trigger voltage level of the bipolar transistor lower than a second breakdown voltage level of the semiconductor device along the conduction path.
2. The semiconductor device of claim 1 , wherein the body region comprises a first well in which a channel is formed along the conduction path during operation and a second well adjacent the first well and spaced from the doped isolating region to establish the first breakdown trigger voltage.
3. The semiconductor device of claim 2 , wherein:
the source region is disposed within the first well; and
the first and second contact regions are disposed within the second well.
4. The semiconductor device of claim 1 , wherein:
the doped isolating region comprises an isolation well in which the isolation contact region is disposed; and
the doped isolating region is configured as a ring surrounding the device area and spaced from the body region to establish the first breakdown trigger voltage.
5. The semiconductor device of claim 1 , wherein the doped isolating region comprises:
an isolation well in which the isolation contact region is disposed;
a buried isolation layer in the substrate extending across the active area; and
a link region in the substrate coupling the well region and the buried isolation layer;
wherein the link region extends laterally inward beyond the isolation well and toward the body region to define a spacing between the body region and the link region that establishes the first breakdown voltage.
6. The semiconductor device of claim 1 , wherein the first and second contact regions are electrically tied to one another.
7. The semiconductor device of claim 1 , wherein the first and second contact regions and the source region are electrically tied to one another.
8. The semiconductor device of claim 1 , wherein:
the isolation contact region and the drain region are electrically tied to one another; and
the body, source, and drain regions are arranged in a laterally diffused metal-oxide semiconductor (LDMOS) transistor device configuration.
9. The semiconductor device of claim 1 , further comprising a shallow trench isolation (STI) region disposed between the first and second contact regions.
10. The semiconductor device of claim 1 , further comprising a silicide blocker supported by the substrate between the first and second contact regions, wherein a portion of the body region is disposed between the first and second contact regions.
11. The semiconductor device of claim 1 , wherein the body region comprises a well in which the first and second contact regions and the source region are disposed.
12. An electronic apparatus comprising:
a substrate; and
a laterally diffused metal-oxide-semiconductor (LDMOS) transistor device in the substrate, the LDMOS transistor device comprising:
a first semiconductor region having a first conductivity type;
second and third semiconductor regions having a second conductivity type and spaced from one another to define a conduction path of the LDMOS transistor device that passes through the first semiconductor region;
a fourth semiconductor region having the second conductivity type and configured to surround a device area in which the conduction path is disposed;
a fifth semiconductor region having the second conductivity type and electrically coupled to the fourth semiconductor region to define a collector region of a bipolar transistor; and
sixth and seventh semiconductor regions within the first semiconductor region, having the first and second conductivity types, respectively, and configured to define a base contact region and an emitter region of the bipolar transistor, respectively;
wherein the fourth semiconductor region and the first semiconductor region are spaced from one another to establish a first breakdown trigger voltage level of the bipolar transistor lower than a second breakdown voltage level of the LDMOS transistor device along the conduction path.
13. The electronic apparatus of claim 12 , wherein:
the first semiconductor region comprises a first well in which a channel is formed along the conduction path during operation and a second well adjacent the first well and spaced from the fourth semiconductor region to establish the first breakdown trigger voltage; and
the sixth and seventh semiconductor regions are formed within the second well.
14. The electronic apparatus of claim 12 , wherein:
the fourth semiconductor region comprises a well in which the fifth semiconductor region is disposed; and
the well is spaced from the first semiconductor region to establish the first breakdown trigger voltage.
15. The electronic apparatus of claim 12 , further comprising a silicide blocker supported by the substrate between the sixth and seventh semiconductor regions, wherein a portion of the first semiconductor region is disposed between the sixth and seventh semiconductor regions.
16. The electronic apparatus of claim 12 , wherein the sixth and seventh semiconductor regions are electrically tied to one another.
17. The electronic apparatus of claim 12 , wherein the fourth, sixth and seventh semiconductor regions are electrically tied to one another.
18. The electronic apparatus of claim 12 , further comprising a shallow trench isolation (STI) region disposed between the sixth and seventh semiconductor regions.