Method of singulating a thin semiconductor wafer
View Patent ↗A method of singulating a semiconductor wafer having two surfaces separated by a thickness T<200 μm includes partitioning it along a network of scribelines on one side. The other side is secured to an elastic foil, which is clamped to a wafer table. A radiative scribing tool is used to produce at least one laser beam having a pulse duration P≦75 ps, and causing the laser beam to scan along each of the scribelines so as to create a scribe with a depth D<T, thereby leaving the second surface intact. The foil is laterally stretched to sever the second major surface along the path of the scribes. In an embodiment, P<C PP , the Time Constant of phonon-phonon coupling in the wafer at the location of incidence of the laser beam.
1. A method of singulating a semiconductor wafer by partitioning it along a network of scribelines, the wafer having two substantially parallel major surfaces that are separated from one another by a thickness T<200 μm, said scribelines extending along a first of said major surfaces, comprising:
adhering the second major surface of the wafer to an elastic foil, which is clamped to a wafer table so as to present the first major surface to a radiative scribing tool;
using the radiative scribing tool to produce at least one pulsed laser beam having a pulse duration P≦75 ps;
causing said laser beam to scan along each of said scribelines so as to create a radiative scribe with a depth D<T, thereby leaving the second major surface intact; and
laterally stretching said foil so as to sever the second major surface along the path of said radiative scribes.
2. A method according to claim 1 , wherein P<C PP , in which C PP is the Time Constant of phonon-phonon coupling in the wafer at the location of incidence of the laser beam.
3. A method according to claim 2 , wherein P<C EP , in which C EP is the Time Constant of electron-phonon coupling in the wafer at the location of incidence of the laser beam.
4. A method according to claim 1 , wherein the difference F=T−D is in the range 5-50 μm.
5. A method according to claim 4 , wherein the difference F=T−D is in the range 10-30 μm.
6. A method according to claim 1 , wherein:
T is in the range 20-200 μm and P is in the range 0.1-55 ps.
7. A method as in claim 6 , wherein T is in the range 30-150 μm, and P is in the range 1-20 ps.
8. A method as in claim 7 , wherein T is in the range 40-100 μm, and P is in the range 5-15 ps.
9. A method according to claim 1 , wherein, for a given scribeline, said radiative scribe is created as a cumulative result of a plurality of process steps, each step entailing a single scan of the laser along said scribeline.
10. A system for singulating a semiconductor wafer by partitioning it along a network of scribelines, the wafer having two substantially parallel major surfaces that are separated from one another by a thickness T<200 μm, said scribelines extending along a first of said major surfaces, the wafer being adhered to an elastic foil on a second of said major surfaces, comprising:
a radiative scribing tool including a laser configured and arranged to generate a pulsed laser beam having a pulse duration P≦75 ps;
a wafer table, constructed and arranged to hold the wafer such that the first major surface is exposed to the radiative scribing tool;
an actuator, configured and arranged to cause the laser beam to relatively scan along each of said scribelines so as to create a radiative scribe with a depth D<T, thereby leaving the second major surface intact; and
actuators constructed and arranged to laterally stretch said foil so as to sever the second major surface along the path of said radiative scribes.