Semiconductor device assembly having a heat spreader
View Patent ↗A packaged semiconductor device includes a package substrate, a semiconductor die on the package substrate, an encapsulant over the semiconductor die and package substrate, and a heat spreader having a pedestal portion and an outer portion surrounding the pedestal portion. The encapsulant includes an opening within a perimeter of the semiconductor die. The bottom surface of the pedestal portion of the heat spreader faces the top surface of the semiconductor die, wherein a first portion of the opening and at least a portion of the encapsulant is between the bottom surface of the pedestal portion and the semiconductor die.
1. A packaged semiconductor device, comprising:
a package substrate;
a semiconductor die on the package substrate;
an encapsulant over the semiconductor die and package substrate, wherein the encapsulant comprises a plurality of openings within a perimeter of the semiconductor die, wherein each opening of the plurality of openings comprises a first portion between the bottom surface of the pedestal portion and the semiconductor die and a second portion outside a perimeter of the bottom surface of the pedestal portion and inside the perimeter of the semiconductor die;
a heat spreader having a pedestal portion and an outer portion surrounding the pedestal portion, wherein a bottom surface of the pedestal portion faces the top surface of the semiconductor die, wherein a first portion of the opening and at least a portion of the encapsulant is between the bottom surface of the pedestal portion and the semiconductor die.
2. The packaged semiconductor device of claim 1 , wherein a thickness of the encapsulant between the bottom surface of the pedestal and the semiconductor die is less than a thickness of the encapsulant outside a perimeter of the bottom surface of the pedestal portion and inside a perimeter of the semiconductor die.
3. The packaged semiconductor device of claim 1 , further comprising:
an interface material within the plurality of openings.
4. The packaged semiconductor device of claim 1 , wherein one of the openings comprises a plurality of protrusions extending from a perimeter of the opening onto a top surface of the semiconductor die, wherein each of the plurality of protrusions is between the bottom surface of the pedestal portion of the heat spreader and the semiconductor die.
5. The packaged semiconductor device of claim 1 , wherein the heat spreader comprises an outer portion surrounding the pedestal portion, wherein the outer portion is thinner than the pedestal portion.
6. The packaged semiconductor device of claim 1 , wherein the heat spreader comprises an outer portion surrounding the pedestal portion, wherein the bottom surface of the pedestal portion is at a different elevation than a bottom surface of the outer portion.
7. The packaged semiconductor device of claim 1 , wherein a shortest distance between the bottom surface of the pedestal portion of the heat spreader and the top surface of the semiconductor die is less than 80 microns.
8. A packaged semiconductor device, comprising:
a package substrate;
a semiconductor die on the package substrate;
an encapsulant over the semiconductor die and package substrate, wherein the encapsulant comprises:
an opening having a perimeter located within a perimeter of the semiconductor die, and
a plurality of protrusions within the opening which extend from a perimeter of the opening onto a top surface of the semiconductor die; and
a heat spreader having a pedestal portion and an outer portion surrounding the pedestal portion, wherein the pedestal portion is over the semiconductor die and wherein the plurality of protrusions and at least a portion of the opening are between the pedestal portion and the semiconductor die.
9. The packaged semiconductor device of claim 8 , further comprising:
an interface material within the opening, between the semiconductor die and the pedestal portion of the heat spreader.
10. The packaged semiconductor device of claim 8 , wherein a bottom surface of the pedestal portion faces the top surface of the semiconductor die, and wherein at least a portion of the perimeter of the opening is located outside a perimeter of a bottom surface of the pedestal portion of the heat spreader and inside the perimeter of the semiconductor die.
11. The packaged semiconductor device of claim 8 , wherein a thickness of the encapsulant between the bottom surface of the pedestal and the semiconductor die is less than a thickness of the encapsulant outside a perimeter of the bottom surface of the pedestal portion.
12. The packaged semiconductor device of claim 8 , wherein a first protrusion of the plurality of protrusions extends a full width of the opening.
13. The packaged semiconductor device of claim 8 , wherein the heat spreader comprises an outer portion surrounding the pedestal portion, wherein the outer portion is thinner than the pedestal portion.
14. The packaged semiconductor device of claim 8 , wherein the pedestal portion is downset relative to the outer portion such that the inner portion contacts interface material over the semiconductor die, and the outer portion contacts adhesive material over the encapsulant.
15. The packaged semiconductor device of claim 8 , wherein a shortest distance between the bottom surface of the pedestal portion of the heat spreader and the top surface of the semiconductor die is less than 80 microns.
16. A method for forming a packaged semiconductor device, comprising:
forming an encapsulant over a semiconductor die and a package substrate, wherein the semiconductor die is mounted onto the packaged substrate, and wherein the encapsulant comprises an opening which exposes a top surface of the semiconductor die and the opening comprises a plurality of protrusions extending from a perimeter of the opening onto a top surface of the semiconductor die, wherein each of the plurality of protrusions is between the bottom surface of the pedestal portion of the heat spreader and the semiconductor die;
applying an interface material to the top surface of the semiconductor die within the opening; and
positioning a pedestal portion of a heat spreader to contact the interface material, wherein a first portion of the opening and at least a portion of the encapsulant is between a bottom surface of the pedestal portion and the semiconductor die.
17. The method of claim 16 , wherein a thickness of the encapsulant between the bottom surface of the pedestal and the semiconductor die is less than a thickness of the encapsulant outside a perimeter of the bottom surface of the pedestal portion and inside a perimeter of the semiconductor die.