Field effect transistor devices with protective regions
View Patent ↗A transistor device includes a first conductivity type drift layer, a second conductivity type first region in the drift layer, a body layer having the second conductivity type on the drift layer including the first region, a source layer on the body layer, and a body contact region that extends through the source layer and the body layer and into the first region. The transistor device further includes a trench through the source layer and the body layer and extending into the drift layer adjacent the first region. The trench has an inner sidewall facing away from the first region. A gate insulator is on the inner sidewall of the trench, and a gate contact is on the gate insulator.
1. A transistor device, comprising:
a drift layer having a first conductivity type;
a first region in the drift layer, the first region having a second conductivity type that is opposite the first conductivity type;
a body layer having the second conductivity type on the drift layer including the first region;
a source layer on the body layer, the source layer having the first conductivity type;
a body contact region having the second conductivity type, the body contact region extending through the source layer and the body layer and into the first region;
a trench in the source layer and the body layer, the trench extending into the drift layer adjacent the first region, the trench having an inner sidewall facing away from the first region;
a gate insulator on the inner sidewall of the trench;
a gate contact on the gate insulator; and
a source ohmic contact on the source layer,
wherein the body contact region conductively connects the first region to the source ohmic contact.
2. The transistor device of claim 1 , wherein a distance between the first region and a bottom corner of the trench is about 0.1 microns to about 2 microns.
3. The transistor device of claim 1 , wherein the body layer and the source layer comprise epitaxial layers.
4. The transistor device of claim 1 , wherein an upper portion of the drift layer adjacent the trench is doped with first conductivity type dopants more heavily than a lower portion of the drift layer to provide a current spreading region in the upper portion of the drift layer.
5. The transistor device of claim 4 , wherein the first region is shallower than the current spreading region.
6. The transistor device of claim 5 , wherein the current spreading region extends beneath the first region.
7. The transistor device of claim 1 , further comprising an epitaxial channel layer on the inner sidewall of the trench, the epitaxial channel layer having the second conductivity type.
8. The transistor device of claim 1 , wherein the first region extends away from the body contact region toward a bottom corner of the trench.
9. The transistor device of claim 1 , wherein, the body contact region and the first region form a continuous region having the second conductivity type.
10. A transistor device, comprising:
a lower drift layer having a first conductivity type;
an upper drift layer having the first conductivity type, wherein the upper drift layer is more heavily doped than the lower drift layer;
a first region in the upper drift layer, the first region having a second conductivity type that is opposite the first conductivity type;
a body layer having the second conductivity type on the upper drift layer;
a source layer on the body layer, the source layer having the first conductivity type;
a body contact region having the second conductivity type, the body contact region extending through the source layer and the body layer and into the first region;
a trench in the source layer and the body layer, the trench extending into the drift layer adjacent the first region, the trench having an inner sidewall facing away from the first region;
a gate insulator on the inner sidewall of the trench;
a gate contact on the gate insulator; and
a source ohmic contact on the source layer,
wherein the body contact region conductively connects the first region to the source ohmic contact.
11. The transistor device of claim 10 , wherein the first region extends away from the body contact region toward a bottom corner of the trench.
12. The transistor device of claim 10 , wherein the body contact region and the first region form a continuous region having the second conductivity type.
13. A transistor device, comprising:
a drift layer having a first conductivity type;
a body layer on the drift layer, the body layer having a second conductivity type that is opposite the first conductivity type;
a source layer on the body layer, the source layer having the first conductivity type;
a trench in the source layer and the body layer, the trench having an inner sidewall and extending into the drift layer;
a gate insulator on the inner sidewall of the trench;
a gate contact on the gate insulator;
a body contact region having the second conductivity type and extending through the source layer and the body layer and into the drift layer;
a first region in the drift layer, the first region having the second conductivity type and contacting the body contact region, wherein the first region extends away from the body contact region toward a bottom corner of the trench; and
a source ohmic contact on the source layer,
wherein the body contact region conductively connects the first region to the source ohmic contact.
14. The transistor device of claim 13 , wherein the body contact region and the first region form a continuous region having the second conductivity type.