Granted Patent B2

US 9,064,622 · App. 13/800,765 · Granted Jun 23, 2015

Abstract

Claims (29)

1. An RF power resistor assembly comprising:

a first trace layer unit shaped and/or sized as a stripline or microstrip structure comprising:

a first dielectric layer including a first ground layer disposed on a first surface of the first dielectric layer;

a second ground layer disposed opposite a second side of said first dielectric layer; and

a first trace layer disposed between said first dielectric layer and said second ground layer.

2. The RF power resistor assembly of claim 1 , wherein said first trace layer unit further comprises a second dielectric layer disposed between said first trace layer and said second ground layer.

3. The RF power resistor assembly of claim 2 , wherein said second ground layer further comprises an input pad thereon.

4. The RF power resistor assembly of claim 2 , wherein said first trace layer is structured to and/or made of a material sufficient to dissipate attenuated power as heat.

5. The RF power resistor assembly of claim 2 , wherein at least one of said first or second dielectric layers is structured to and/or made of a material sufficient to dissipate attenuated power as heat.

6. The RF power resistor assembly of claim 2 , wherein said first trace layer is made of a conductive metallic material or conductive non-metallic material.

7. The RF power resistor assembly of claim 6 , wherein the conductive metallic material is selected from the group consisting of copper, gold, silver, and tungsten.

8. The RF power resistor assembly of claim 6 , wherein the conductive non-metallic material is graphite.

9. The RF power resistor assembly of claim 4 , wherein said first trace layer is geometrically sized and/or shaped as a spiral.

10. The RF power resistor assembly of claim 2 , wherein at least one of said trace layer, said first dielectric layer, and said second dielectric layer is made of a lossy material.

11. The RF power resistor assembly of claim 2 , wherein at least one of said first or second dielectric layers is made of heat resistant material.

12. The RF power resistor assembly of claim 2 wherein at least one of said first or second dielectric layers is made of ceramic material.

13. The RF power resistor assembly of claim 2 , wherein at least one of said first or second dielectric layers is made of aluminum nitride.

14. The RF power resistor assembly of claim 2 , wherein said first trace layer and at least one of said first or second dielectric layers are located to be adjacent to and in contact with each other.

15. The RF power resistor assembly of claim 1 , wherein a first end of said first trace layer is open circuited, shorted, terminated, or used as an attenuator with a second port for an output signal.

16. The RF power resistor assembly of claim 11 , wherein the first end of said first trace layer includes a termination and is structured to terminate the first trace layer; and

the termination is one of the following types: reflecting-open-type termination, reflecting-short-type termination; port-for-output-signal-type termination; and other type termination.

17. The RF power resistor assembly of claim 2 , further comprising a

a second trace layer unit comprising:

a third dielectric layer disposed on a first surface of the first ground layer;

a fourth dielectric layer including a third ground layer disposed on a first surface of the fourth dielectric layer; and

a second trace layer disposed between said third dielectric layer and said fourth dielectric layer.

18. The RF power resistor assembly of claim 17 , further comprising more than one buried vias extending between at least two different layers.

19. The RF power resistor assembly of claim 17 , further comprising more than one ground vias extending between at least two different layers.

20. The RF power resistor assembly of claim 19 , wherein each of said more than one ground vias are connected to at least one conductive pad on one of the at least two different layers.

Assignments (8)