Tantalum sputtering target
View Patent ↗Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity).
1. A tantalum sputtering target, consisting of 1 mass ppm or more and 50 mass ppm or less of boron and tantalum of a purity, excluding boron and gas components, of 99.998% or higher.
2. A tantalum sputtering target, consisting of 10 mass ppm or more and 50 mass ppm or less of boron and tantalum of a purity, excluding boron and gas components, of 99.998% or higher.
3. A tantalum sputtering target, consisting of 10 mass ppm or more and 20 mass ppm or less of boron and tantalum of a purity, excluding boron and gas components, of 99.998% or higher.
4. The tantalum sputtering target according to claim 3 , wherein variation in the boron content in the target is ±20% or less.
5. The tantalum sputtering target according to claim 4 , wherein an average crystal grain size is 110 μm or less.
6. The tantalum sputtering target according to claim 5 , wherein variation in the crystal grain size is ±20% or less.
7. The tantalum sputtering target according to claim 3 , wherein an average crystal grain size is 110 μm or less.
8. The tantalum sputtering target according to claim 7 , wherein variation in the crystal grain size is ±20% or less.
9. The tantalum sputtering target according to claim 2 , wherein variation in the boron content in the target is ±20% or less.
10. The tantalum sputtering target according to claim 9 , wherein an average crystal grain size is 110 μm or less.
11. The tantalum sputtering target according to claim 10 , wherein variation in the crystal grain size is ±20% or less.
12. The tantalum sputtering target according to claim 2 , wherein an average crystal grain size is 110 μm or less.
13. The tantalum sputtering target according to claim 12 , wherein variation in the crystal grain size is ±20% or less.
14. The tantalum sputtering target according to claim 1 , wherein variation in the boron content in the target is ±20% or less.
15. The tantalum sputtering target according to claim 14 , wherein an average crystal grain size is 110 μm or less.
16. The tantalum sputtering target according to claim 15 , wherein variation in the crystal grain size is ±20% or less.
17. The tantalum sputtering target according to claim 1 , wherein an average crystal grain size is 110 μm or less.
18. The tantalum sputtering target according to claim 17 , wherein variation in the crystal grain size is ±20% or less.