IP Library Granted Patent US 9,023,487
Granted Patent B2
US 9,023,487 · App. 13/808,009 · Granted May 5, 2015

Laminated structure and method for producing the same

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Quick Facts
Patent No.
US 9,023,487
App. No.
13/808,009
Granted
May 5, 2015
Kind
B2
Abstract

Provided by the present invention is a laminated structure with good use efficiency, in which diffusion of tin from an indium-tin solder material to an indium target is favorably suppressed, and a method for producing the same. The laminated structure has a backing plate, an indium-tin solder material, and an indium target laminated in this order, and the concentration of tin in the 2.5 to 3.0 mm thickness range of the indium target from the indium-tin solder material side surface is 5 wtppm or less.

Claims (9)

1. A laminated structure comprising:

a backing plate;

an indium-tin solder material, wherein a thickness of the indium-tin solder material is between 0.1 mm and 0.5 mm; and

an indium target,

the structure laminated in this order, wherein a concentration of tin in a 2.5 to 3.0 mm thickness range within the indium target, as measured from a indium-tin solder material side surface, is 5 wtppm or less.

2. The laminated structure according to claim 1 , wherein the concentration of tin in the 2.0 to 2.5 mm thickness range within the indium target as measured from the indium-tin solder material side surface is 100 wtppm or less.

3. The laminated structure according to claim 2 , wherein the concentration of tin in the 2.0 to 2.5 mm thickness range within the indium target as measured from the indium-tin solder material side surface is 80 wtppm or less.

4. The laminated structure according to any one of claims 1 to 3 , wherein the concentration of tin in a 1.5 to 2.0 mm thickness range within the indium target as measured from the indium-tin solder material side surface is 200 wtppm or less.

5. The laminated structure according to claim 4 , wherein the concentration of tin in the 1.5 to 2.0 mm thickness range within the indium target as measured from the indium-tin solder material side surface is 160 wtppm or less.

Assignments (3)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
CHANGE OF ADDRESS Recorded Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 2, 2013
From: ENDO, YOUSUKE; SAKAMOTO, MASARU
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 029555/0397 →