Sputtering target of ferromagnetic material with low generation of particles
View Patent ↗Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
1. A sputtering target of a ferromagnetic material consisting of metallic phases and non-magnetic oxide grains, said metallic phases consisting of a phase (A) and a Co-based alloy phase (B) and consisting of a composition as a whole of 20 mol % or less of Cr and Co as the remainder; wherein the sputtering target has a structure in which the phase (A) forms a matrix thereof consisting of Cr and Co, the Co-based alloy phase (B) has a different composition than that of the phase (A) and exists as grains dispersed in the phase (A), and the non-magnetic oxide grains are dispersed only within the phase (A), wherein, in a cross-section of the sputtering target, the oxide grains occupy an area of 80% or less of an area of the phase (A) existing between a periphery line of the Co-based alloy phase (B) and a line having a distance of 2 μm from the periphery line, and wherein the grains of the Co-based alloy phase (B) have an average grain size of 10 μm or more and 150 μm or less.
2. The sputtering target of ferromagnetic material according to claim 1 , wherein, in a cross-section of the sputtering target, the oxide grains existing in said area between the periphery line of the Co-based alloy phase (B) and the line having a distance of 2 μm from the periphery line have long diameters thereof of an average length of 10 μm or less.
3. The sputtering target of ferromagnetic material according to claim 2 , wherein the grains of the Co-based alloy phase (B) have an average aspect ratio of 1:2 to 1:10.
4. The sputtering target of ferromagnetic material according to claim 3 , wherein the grains of the Co-based alloy phase (B) have a flat shape and a Cr content of 10 wt % or less.
5. The sputtering target of ferromagnetic material according to claim 4 , wherein the grains of the Co-based alloy phase (B) in the cross section of the sputtering target occupy 15 to 50% of a total area of the cross section.
6. The sputtering target of ferromagnetic material according to claim 1 , wherein the grains of the Co-based alloy phase (B) have an average aspect ratio of 1:2 to 1:10.
7. The sputtering target of ferromagnetic material according to claim 1 , wherein the grains of the Co-based alloy phase (B) have a flat shape and a Cr content of 10 wt % or less.
8. The sputtering target of ferromagnetic material according to claim 1 , wherein the grains of the Co-based alloy phase (B) in a cross section of the sputtering target occupy 15 to 50% of a total area of the cross section.
9. A sputtering target of a ferromagnetic material consisting of metallic phases and non-magnetic oxide grains, said metallic phases consisting of a phase (A) and a Co-based alloy phase (B) and consisting of a composition as a whole of 20 mol % or less of Cr, 5 mol % or more and 30 mol % or less of Pt, and Co as the remainder; wherein the sputtering target has a structure in which the phase (A) forms a matrix thereof consisting of Cr, Pt and Co, the Co-based alloy phase (B) has a different composition than that of the phase (A) and exists as grains dispersed in the phase (A), and the non-magnetic oxide grains are dispersed only within the phase (A), wherein, in a cross-section of the sputtering target, the oxide grains occupy an area of 80% or less of an area of the phase (A) existing between a periphery line of the Co-based alloy phase (B) and a line having a distance of 2 μm from the periphery line, and wherein the grains of the Co-based alloy phase (B) have an average grain size of 10 μm or more and 150 μm or less.
10. The sputtering target of ferromagnetic material according to claim 9 , wherein, in a cross-section of the sputtering target, the oxide grains existing in said area between the periphery line of the Co-based alloy phase (B) and the line having a distance of 2 μm from the periphery line have long diameters thereof of an average length of 10 μm or less.
11. The sputtering target of ferromagnetic material according to claim 10 , wherein the grains of the Co-based alloy phase (B) have an average aspect ratio of 1:2 to 1:10.
12. The sputtering target of ferromagnetic material according to claim 11 , wherein the grains of the Co-based alloy phase (B) have a flat shape and a Cr content of 10 wt % or less.
13. The sputtering target of ferromagnetic material according to claim 12 , wherein the grains of the Co-based alloy phase (B) in the cross section of the sputtering target occupy 15 to 50% of a total area of the cross section.
14. The sputtering target of ferromagnetic material according to claim 9 , wherein the grains of the Co-based alloy phase (B) have an average aspect ratio of 1:2 to 1:10.
15. The sputtering target of ferromagnetic material according to claim 9 , wherein the grains of the Co-based alloy phase (B) have a flat shape and a Cr content of 10 wt % or less.
16. The sputtering target of ferromagnetic material according to claim 9 , wherein the grains of the Co-based alloy phase (B) in a cross section of the sputtering target occupy 15 to 50% of a total area of the cross section.
17. A sputtering target of a ferromagnetic material consisting of metallic phases and non-magnetic oxide grains, said metallic phases consisting of a phase (A) and a Co-based alloy phase (B) and consisting of a composition as a whole of 20 mol % or less of Cr, one or more additive element selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W within a range of 0.5 mol % or more and 10 mol % or less, and Co as the remainder; wherein the sputtering target has a structure in which the phase (A) forms a matrix thereof consisting of Cr, the additive element, and Co, wherein the Co-based alloy phase (B) has a different composition than that of the phase (A) and exists as grains dispersed in the phase (A), and the non-magnetic oxide grains are dispersed only within the phase (A), wherein, in a cross-section of the sputtering target, the oxide grains occupy an area of 80% or less of an area of the phase (A) existing between a periphery line of the Co-based alloy phase (B) and a line having a distance of 2 μm from the periphery line, and wherein the grains of the Co-based alloy phase (B) have an average grain size of 10 μm or more and 150 μm or less.
18. The sputtering target according to claim 17 , wherein, in a cross-section of the sputtering target, the oxide grains existing in said area between the periphery line of the Co-based alloy phase (B) and the line having a distance of 2 μm from the periphery line have long diameters thereof of an average length of 10 μm or less.
19. The sputtering target according to claim 18 , wherein the grains of the Co-based alloy phase (B) have an average aspect ratio of 1:2 to 1:10 and a Cr content of 10 wt % or less, and wherein the grains of the Co-based alloy phase (B) in the cross section of the sputtering target occupy 15 to 50% of a total area of the cross section.
20. A sputtering target of a ferromagnetic material consisting of:
metallic phases and non-magnetic oxide grains, said metallic phases consisting of a phase (A) and a Co-based alloy phase (B) and consisting of a composition as a whole of 20 mol % or less of Cr, 5 to 30 mol % of Pt, one or more additive element selected from B, Ti, V, Mn, Zr, Nb, Ru, Mo, Ta, and W within a range of 0.5 mol % or more and 10 mol % or less, and Co as the remainder;
wherein the sputtering target has a structure in which the phase (A) forms a matrix thereof consisting of Cr, Pt, the additive element, and Co;
wherein the Co-based alloy phase (B) has a different composition than that of the phase (A) and exists as grains dispersed in the phase (A), and the non-magnetic oxide grains are dispersed only within the phase (A);
wherein, in a cross-section of the sputtering target, the oxide grains occupy an area of 80% or less of an area of the phase (A) existing between a periphery line of the Co-based alloy phase (B) and a line having a distance of 2 μm from the periphery line; and
wherein the grains of the Co-based alloy phase (B) have an average grain size of 10 μm or more and 150 μm or less.