Indium sputtering target and method for manufacturing same
View Patent ↗An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm prior to sputtering.
1. An indium metal sputtering target having purity of 99.99 mass % or more and having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm in advance of sputtering time.
2. An indium metal sputtering target having purity of 99.99 mass % or more and having a surface to be sputtered with a ten point average roughness Rzjis of from 100 μm to 400 μm in advance of sputtering time.
3. The indium metal sputtering target according to claim 1 , wherein a decrease in film deposition rate after ten hours is 30% or less compared with an initial film deposition rate.
4. A method of manufacturing an indium metal sputtering target according to claim 1 , comprising a step of treating a surface to be sputtered using dry ice particle blasting.
5. A method of manufacturing an indium metal sputtering target according to claim 2 , comprising a step of treating a surface to be sputtered using dry ice particle blasting.
6. A method of manufacturing an indium metal sputtering target according to claim 3 , comprising a step of treating a surface to be sputtered using dry ice particle blasting.
7. The indium metal sputtering target according to claim 2 , wherein a decrease in film deposition rate after ten hours is 30% or less compared with an initial film deposition rate.
8. A method of manufacturing an indium metal sputtering target according to claim 1 , comprising a step of treating a surface to be sputtered using an abrasive paper having a grain size of #60 or greater.
9. A method of manufacturing an indium metal sputtering target according to claim 2 , comprising a step of treating a surface to be sputtered using an abrasive paper having a grain size of #60 or greater.
10. A method of manufacturing an indium metal sputtering target according to claim 3 , comprising a step of treating a surface to be sputtered using an abrasive paper having a grain size of #60 or greater.
11. A method of manufacturing an indium metal sputtering target according to claim 8 , wherein the abrasive paper has a grain size of from #60 to 400.
12. A method of manufacturing an indium metal sputtering target according to claim 9 , wherein the abrasive paper has a grain size of from #60 to 400.
13. A method of manufacturing an indium metal sputtering target according to claim 10 , wherein the abrasive paper has a grain size of from #60 to 400.