IP Library Granted Patent US 9,068,258
Granted Patent B2
US 9,068,258 · App. 13/824,412 · Granted Jun 30, 2015

Titanium target for sputtering

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Quick Facts
Patent No.
US 9,068,258
App. No.
13/824,412
Granted
Jun 30, 2015
Kind
B2
Abstract

Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film.

Claims (13)

1. A titanium target for sputtering having a Shore hardness Hs of 20 or more, a basal plane orientation ratio of 70% or less, and a 0.2% proof stress in a tensile test at room temperature (23° C.) of 330 N/mm 2 or more.

2. The titanium target for sputtering according to claim 1 , having a purity of 99.995 mass % or more, excluding gas components.

3. The titanium target for sputtering according to claim 1 , wherein the Shore hardness Hs is 25 or more.

4. The titanium target for sputtering according to claim 1 , wherein the basal plane orientation ratio is 55% or less.

5. A titanium target for sputtering having a Shore hardness Hs of 25 or more and a basal plane orientation ratio of 70% or less.

6. The titanium target for sputtering according to claim 5 , wherein the basal plane orientation ratio is 55% or less.

7. The titanium target for sputtering according to claim 5 , wherein the titanium target has a 0.2% proof stress in a tensile test at room temperature (23° C.) of 330 N/mm 2 or more.

8. The titanium target for sputtering according to claim 5 having a purity of 99.995 mass % or more, excluding gas components.

9. A titanium target for sputtering, having a Shore hardness Hs of 20 or more, a basal plane orientation ratio of 70% or less, and a 0.2% proof stress in a tensile test at 500° C. of 36 N/mm 2 or more.

10. The titanium target for sputtering according to claim 9 , wherein the Shore hardness Hs is 25 or more.

11. The titanium target for sputtering according to claim 9 having a purity of 99.995 mass % or more, excluding gas components.

12. The titanium target for sputtering according to claim 9 , wherein the basal plane orientation ratio is 55% or less.

13. The titanium target for sputtering according to claim 9 , wherein the 0.2% proof stress in a tensile test at room temperature (23° C.) is 330 N/mm 2 or more.

Assignments (3)
CHANGE OF ADDRESS Recorded Aug 11, 2021
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 057160/0114 →
CHANGE OF ADDRESS Recorded Feb 7, 2017
From: JX NIPPON MINING & METALS CORPORATION
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 041649/0733 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2013
From: TSUKAMOTO, SHIRO; MAKINO, NOBUHITO; FUKUYO, HIDEAKI
To: JX NIPPON MINING & METALS CORPORATION
Reel/Frame 030040/0935 →