IP Library Granted Patent US 9,299,670
Granted Patent B2
US 9,299,670 · App. 13/829,737 · Granted Mar 29, 2016

Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof

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Quick Facts
Patent No.
US 9,299,670
App. No.
13/829,737
Granted
Mar 29, 2016
Kind
B2
Abstract

A stacked microelectronic package can comprise a package body having an external vertical package sidewall, a plurality of microelectronic devices embedded within the package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the external vertical package sidewall. A cavity is formed on an external surface of the package body between a first one of the package edge conductors and a second one of the package edge conductors. Electrically conductive material is in the cavity and in electrical contact with a first and a second one of the package edge conductors, wherein the conductive material in the cavity is within planform dimensions of the microelectronic package.

Claims (33)

1. A stacked microelectronic package, comprising:

a molded package body having an external vertical package sidewall;

a plurality of singulated microelectronic devices embedded within the molded package body

package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the external vertical package sidewall;

a cavity formed in an external surface of the molded package body between a first one of the package edge conductors and a second one of the package edge conductors; and

electrically conductive material in the cavity and in electrical contact with a first and a second one of the package edge conductors, wherein the conductive material in the cavity is within planform dimensions of the microelectronic package and sidewalls of the cavity cover all side edges of the electrically conductive material.

2. A stacked microelectronic package according to claim 1 wherein the package edge conductors are formed to electrically couple the plurality of microelectronic devices embedded within the molded package body.

3. A stacked microelectronic package according to claim 1 wherein the plurality of microelectronic devices comprises a first microelectronic device and a second microelectronic device located in different levels of the molded package body, and wherein the package edge conductors are formed to electrically couple the first microelectronic device to the second microelectronic device.

4. A stacked microelectronic package according to claim 3 wherein the cavity is formed in a step configuration that includes a run portion over a major surface of one of the levels of the molded package body, the run portion extending between and in contact with the external vertical package sidewall of a first level of the different levels and the external vertical package sidewall of a second level of the different levels.

5. A stacked microelectronic package according to claim 1 wherein a portion of the first and second one of the package edge conductors form part of the cavity.

6. A stacked microelectronic package according to claim 5 wherein the cavity extends beyond at least one of the first and second one of the package edge conductors.

7. A stacked microelectronic package according to claim 5 wherein the cavity extends to an intermediate location over at least one of the first and second one of the package edge conductors.

8. A stacked microelectronic package, comprising:

a molded package body having an external vertical package sidewall;

a first singulated microelectronic device embedded within a first level of the molded package body;

a second singulated microelectronic device embedded within a second level of the molded package body;

a first package edge conductor electrically coupled to the first microelectronic device and extending to the external vertical package sidewall, and a second package edge conductor electrically coupled to the second microelectronic device and extending to the external vertical package sidewall;

a cavity formed in an external surface of the molded package body between the first package edge conductor and the second package edge conductor; and

electrically conductive material in the cavity and in electrical contact with the first and second package edge conductors, wherein sidewalls of the cavity overlap all side edges of the electrically conductive material.

9. A stacked microelectronic package according to claim 8 wherein the first and second package edge conductors are formed to electrically couple the first and second microelectronic devices embedded within the molded package body.

10. A stacked microelectronic package according to claim 3 wherein the cavity is formed in a step configuration that includes a run portion over a major surface of one of the levels of the molded package body, the run portion extending between and in contact with the external vertical package sidewall of a first level of the different levels and the external vertical package sidewall of a second level of the different levels.

11. A stacked microelectronic package, comprising:

a molded package body having an external vertical package sidewall, a plurality of singulated microelectronic devices embedded within the molded package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the external vertical package sidewall;

a cavity in an external surface of the molded package body between a first one of the package edge conductors and a second one of the package edge conductors, wherein the cavity is filled with electrically conductive material and top, bottom and side edges of the electrically conductive material are covered by the cavity.

12. A stacked microelectronic package as claimed in claim 11 wherein the first and second one of the package edge conductors are formed to electrically couple the plurality of microelectronic devices embedded within the molded package body.

13. A stacked microelectronic package as claimed in claim 11 wherein the plurality of microelectronic devices comprises a first microelectronic device and a second microelectronic device located in different levels of the molded package body, and wherein the first and second one of the package edge conductors are formed to electrically couple the first microelectronic device to the second microelectronic device.

14. A stacked microelectronic package as claimed in claim 11 wherein the cavity is formed between the first and second one of the package edge conductors and the conductive material is in contact with the first and second ones of the package edge conductors.

15. A stacked microelectronic package as claimed in claim 11 wherein the cavity is formed by removing a portion of the first and second one of the package edge conductors.

16. A stacked microelectronic package as claimed in claim 15 wherein the cavity is formed by extending the cavity beyond at least one of the first and second one of the package edge conductors.

17. A stacked microelectronic package as claimed in claim 15 wherein the cavity is formed by extending the cavity to an intermediate location over at least one of the first and second one of the package edge conductors.

18. A stacked microelectronic package as claimed in claim 13 wherein the cavity is formed in a step configuration that includes a run portion over a major surface of one of the levels of the molded package body, the run portion extending between and in contact with the external vertical package sidewall of a first level of the different levels and the external vertical package sidewall of a second level of the different levels.

19. A stacked microelectronic package as claimed in claim 18 wherein the conductive material in the cavity is within planform dimensions of the microelectronic package.

20. A stacked microelectronic package as claimed in claim 11 wherein the conductive material comprises one of a group consisting of: an electrically conductive adhesive, conductive polymer, a polymer filled with conductive particles, a metal alloy, metal coated organic particles, metal coated ceramic particles, solder paste, solder-filled adhesive, nanoparticle-filled ink, a metal-containing adhesive, a metal-containing epoxies, electrically-conductive pastes, indium, and bismuth.

Assignments (22)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0704 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0725 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0744 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 030445/0737 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030445/0709 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded May 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030445/0581 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 14, 2013
From: YAP, WENG F.; VINCENT, MICHAEL B.; WRIGHT, JASON R.
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 030005/0747 →