Storage elements, structures and methods having edgeless features for programmable layer(s)
View Patent ↗A storage element can include a bottom structure having at least one edge formed by a top surface and a side surface; a programmable layer, programmable between at least two different impedance states, and formed over the at least one edge and in contact with a portion of the bottom structure; an insulating layer that extends above the top surface of the bottom structure having an opening to the bottom structure formed therein, the opening having sloped sides; and at least one top layer formed within the opening and in contact with the programmable layer. Methods of making such a storage element are also disclosed.
1. A storage element, comprising:
a bottom structure having at least one edge formed by a top surface and a side surface;
a programmable layer, programmable between at least two different impedance states, and formed over the at least one edge and in contact with a portion of the bottom structure;
an insulating layer that extends above the top surface of the bottom structure in contact with at least the top surface portion of the at least one edge, the insulating layer having an opening to the bottom structure formed therein, the opening having sloped sides and being offset with respect to the at least one edge; and
at least one top layer formed within the opening and in contact with the programmable layer; wherein
the programmable layer is formed in contact with the sloped side of the opening.
2. The storage element of claim 1 , wherein:
the programmable layer has a thickness that is no more than 20% of size of the opening at the top surface of the bottom structure.
3. The storage element of claim 1 , wherein:
the programmable layer comprises a solid electrolyte; and
the top layer comprises at least one element that is ion conductible within the solid electrolyte.
4. The storage element of claim 3 , wherein:
the programmable layer comprises a material selected from the group of: a metal oxide and a chalcogenide.
5. The storage element of claim 4 , wherein:
the top layer comprises a material selected from the group of: a metal that is ion conductible within the solid electrolyte; a chalcogenide in combination with a metal that is ion conductible within the solid electrolyte; and an alloy of a metal that is ion conductible within the solid electrolyte.
6. The storage element of claim 1 , wherein:
the programmable layer comprises a solid electrolyte; and
the bottom structure comprises at least one element that is ion conductible within the solid electrolyte.
7. The storage element of claim 1 , further including:
an etch stop layer formed between the insulating layer and the programmable layer and over the at least one edge, the etch stop layer having a substantially slower etch rate as compared to the insulating layer in response to a predetermined etch process; wherein
the opening is formed through the etch stop layer.
8. The storage element of claim 1 , wherein:
the bottom structure includes a bottom surface in contact with at least one conductive interconnect layer of an integrated circuit device.
9. The storage element of claim 1 , wherein:
the top layer is common to a plurality of other storage elements in an integrated circuit device, the other storage elements having the same structure as the storage element.