Thin-film transparent conductive structure and devices made therewith
View Patent ↗A transparent conductive structure useful in the fabrication of electrical, electronic, and optoelectronic devices is provided by a mesh-like metallic structure in the form of a thin film having a plurality of apertures, e.g. one having an average size of 250 nm to 425 nm as measured in the largest dimension and an average nearest-neighbor spacing of 300 nm to 450 nm. In another aspect, the metallic thin film has plural sublayers of different metals, and may have apertures up to 2 μm in size and an average nearest-neighbor spacing of up to 2.5 μm. The metallic thin film may be 20 to 200 nm thick, and may be formed on a flexible or rigid substrate or on a device itself. The structure exhibits a transparency enhanced over a value determined simply by the fraction of the area of the metallic film occupied by the apertures.
1. A thin-film transparent conductive structure comprising:
(a) a substrate; and
(b) a metallic layer disposed on the substrate and having therein an array of a plurality of apertures having an average size of 250 nm to 425 nm as measured in the largest dimension and an average nearest-neighbor spacing of 300 nm to 450 nm, and
wherein the metallic layer has thickness of 20 nm to 120 nm and a DC sheet resistance of 100 ohms per square or less, the apertures define an areal filling fraction of at least 45%, and the thin-film transparent conductive structure exhibits an enhanced transmission of at least 60%, as measured over a range of wavelengths from 400 nm to 700 nm.
2. The thin-film transparent conductive structure of claim 1 , wherein the metallic layer is comprised of a metal selected from the group consisting of Ag, Cu, Ni, Au, Ti, Cr, Al, and mixtures and alloys thereof.
3. The thin-film transparent conductive structure of claim 2 , wherein the metallic layer is comprised of Ag.
4. The thin-film transparent conductive structure of claim 1 , wherein the metallic layer comprises a plurality of metallic sublayers, each being composed of a metal selected from the group consisting of Ag, Cu, Ni, Au, Ti, Cr, Al, and mixtures and alloys thereof.
5. The thin-film transparent conductive structure of claim 4 , wherein the metallic layer comprises exactly two metallic sublayers that are composed of different metals.
6. The thin-film transparent conductive structure of claim 4 , wherein the metallic layer consists essentially of an Ag sublayer and an Al sublayer.
7. The thin-film transparent conductive structure of claim 1 , wherein the average size of the apertures is 320 nm to 405 nm.
8. The thin-film transparent conductive structure of claim 1 , wherein the average nearest-neighbor spacing is 400 nm to 450 nm.
9. The thin-film transparent conductive structure of claim 1 , wherein the array is a regular, close-packed array.
10. The thin-film transparent conductive structure of claim 1 , wherein the apertures have a circular shape.
11. An electronic device comprising the thin-film transparent conductive structure of claim 1 .
12. A photovoltaic device comprising the thin-film transparent conductive structure of claim 1 .
13. An OLED device comprising the thin-film transparent conductive structure of claim 1 .
14. A thin-film transparent conductive structure comprising:
(a) a substrate; and
(b) a metallic layer disposed on the substrate and having therein an array of a plurality of apertures having an average size of 250 nm to 2 μm as measured in the largest dimension and an average nearest-neighbor spacing of 300 nm to 2.5 μm, the metallic layer comprising a plurality of metallic sublayers, each being composed of a metal selected from the group consisting of Ag, Cu, Ni, Au, Ti, Cr, Al, and mixtures and alloys thereof, and
wherein the thin-film transparent conductive structure exhibits an enhanced transmission as measured over a range of wavelengths from 400 nm to 700 nm and a DC sheet resistance of 100 ohms per square or less.
15. The thin-film transparent conductive structure of claim 14 , wherein the metallic layer consists essentially of an Ag sublayer and an Al sublayer.
16. The thin-film transparent conductive structure of claim 14 , wherein the average size is 250 to 425 nm as measured in the largest dimension and the average nearest-neighbor spacing is 300 nm to 450 nm.
17. The thin-film transparent conductive structure of claim 14 , wherein the metallic layer has thickness of 20 nm to 200 nm.
18. The thin-film transparent conductive structure of claim 14 , wherein the metallic layer has thickness of 20 nm to 120 nm.