Low loss electronic devices having increased doping for reduced resistance and methods of forming the same
View Patent ↗An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2×10 19 cm −3 . Related methods are also disclosed.
1. An electronic device, comprising:
a drift region having a first conductivity type; and
a grid comprising a plurality of doped regions formed in the drift region and having a second conductivity type;
wherein the doped regions have a dopant concentration of at least 2.0×10 19 cm −3 to a depth of 3000 Å; and
wherein the dopant comprises aluminum ions.
2. The electronic device of claim 1 , wherein the doped regions have a dopant concentration of at least 3.0×10 19 cm −3 .
3. The electronic device of claim 1 , wherein the doped regions have a dopant concentration of at least 4.0×10 19 cm −3 .
4. The electronic device of claim 1 , wherein the doped regions have a dopant concentration of at least 7.0×10 19 cm −3 .
5. The electronic device of claim 1 , wherein the doped regions have a dopant concentration of at least 8.0×10 19 cm −3 .
6. The electronic device of claim 1 , wherein the doped regions have a dopant concentration between 2.5×10 19 cm −3 and 9.0×10 19 cm −3 .
7. The electronic device of claim 1 , wherein the doped regions have a dopant concentration between 4.0×10 19 cm −3 and 9.0×10 19 cm −3 .
8. The electronic device of claim 1 , wherein the doped regions have a dopant concentration between 6.0×10 19 cm −3 and 9.0×10 19 cm −3 .
9. The electronic device of claim 1 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
10. The electronic device of claim 1 , wherein the drift region comprises a SiC layer.
11. The electronic device of claim 1 , further comprising a contact on the drift region that forms a Schottky junction with the drift region.
12. The electronic device of claim 11 , further comprising a metal layer on the contact.
13. The electronic device of claim 12 , wherein the metal layer is Ti and/or TiW.
14. The electronic device of claim 1 , wherein the electronic device is a junction barrier Schottky (JBS) diode.
15. An electronic device that comprising:
a semiconductor device comprising:
a drift region having a first conductivity type; and
a grid comprising a plurality of doped regions formed in the drift region and having a second conductivity type;
wherein the semiconductor device is configured to switch a voltage between 6000 volts and 8000 volts and has a switching loss less than 450 μJ responsive to a pulse voltage between 6000 volts and 8000 volts.
16. The electronic device of claim 15 , wherein the semiconductor device is configured to switch the voltage between 6500 volts and 7500 volts and has a switching loss less than 400 μJ.
17. The electronic device of claim 15 , wherein the semiconductor device is configured to switch the voltage between 6000 volts and 7000 volts and has a switching loss less than 300 μJ.
18. The electronic device of claim 15 , wherein the semiconductor device is a junction barrier Schottky (JBS) diode and wherein the switching loss is not associated with diode junction capacitance.
19. The electronic device of claim 15 , wherein the voltage is switched at a rate of approximately 150 kV/μsec.
20. An electronic device comprising:
a semiconductor device comprising:
a drift region having a first conductivity type; and
a grid comprising a plurality of doped regions formed in the drift region and having a second conductivity type;
wherein the semiconductor device is configured to switch a voltage between 6000 volts and 8000 volts and has a charge loss less than 120 nC responsive to a pulse voltage between 6000 volts and 8000 volts.
21. The electronic device of claim 20 , wherein the semiconductor device is configured to switch the voltage between 6500 volts and 8000 volts and has a charge loss less than 160 nC.
22. The electronic device of claim 20 , wherein the semiconductor device is configured to switch the voltage between 7000 volts and 8000 volts and has a charge loss less than 230 nC.
23. The electronic device of claim 20 , wherein the semiconductor device is a junction barrier Schottky (JBS) diode and wherein the charge loss is not associated with diode junction capacitance.
24. The electronic device of claim 20 , wherein the voltage is switched at a rate of approximately 150 kV/μsec.