Front to back resistive random access memory cells
View Patent ↗A resistive random access memory cell formed in an integrated circuit includes a first resistive random access memory device including an anode and a cathode, a second resistive random access memory device including an anode and a cathode, the cathode of the second resistive random access memory device connected to the anode of the first resistive random access memory device, a programming transistor having a first source/drain terminal connected to a programming potential node, a second source/drain terminal connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device, and a gate connected to a program-enable nod, and at least one switch transistor having a gate connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device.
1. A resistive random access memory cell formed in an integrated circuit comprising:
a first resistive random access memory device including an anode and a cathode;
a second resistive random access memory device including an anode and a cathode, the cathode of the second resistive random access memory device connected to the anode of the first resistive random access memory device;
a programming transistor having a first source/drain terminal connected to a programming potential node, a second source/drain terminal connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device, and a gate connected to a program-enable node; and
at least one switch transistor having a gate connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device.
2. The resistive random access memory cell of claim 1 , further comprising:
a first programmable circuit node connected to the cathode of the first resistive random access memory device; and
a first programmable circuit node connected to the anode of the second resistive random access memory device.
3. The resistive random access memory cell of claim 1 wherein;
the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device are connected to a segment of a first metal layer in the integrated circuit; and
the cathode of the first and second resistive random access memory device and the anode of the second resistive random access memory device are connected to different segments of a second metal layer disposed above the first metal layer in the integrated circuit.
4. The resistive random access memory cell of claim 3 wherein the first metal layer is the lowest metal layer in the integrated circuit.
5. The resistive random access memory cell of claim 1 wherein at the least one switch transistor having a gate connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device comprises a plurality of switch transistors each having a gate connected to the anode of the first resistive random access memory device and the cathode of the second resistive random access memory device.
6. The resistive random access memory cell of claim 1 wherein;
the anode of the first resistive random access memory device is connected to a first segment of a first metal layer in the integrated circuit;
the anode of the second resistive random access memory device is connected to a second segment of the first metal layer in the integrated circuit;
the cathode of the first resistive random access memory device is connected to a first segment of a second metal layer in the integrated circuit;
the cathode of the second resistive random access memory device is connected to a second segment of the second metal layer in the integrated circuit; and
the first segment of the first metal layer is connected to the second segment of the second metal layer through an inter-metal via.