Non-volatile storage with metal oxide switching element and methods for fabricating the same
Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.
1. A method of fabricating a memory cell, the method comprising:
forming a bottom electrode;
forming a metal oxide memory region over the bottom electrode;
forming a bi-layer capping region over the metal oxide region, including depositing a titanium layer over the metal oxide memory region and depositing a titanium oxide layer over the titanium layer, the titanium layer contains un-reacted titanium as deposited;
exposing the un-reacted titanium to an etchant, comprising exposing the un-reacted titanium to etching with hydrofluoric (HF) acid while at least a portion of the titanium layer is still un-reacted and has not oxidized to become titanium oxide; and
forming a top electrode over the bi-layer capping layer.
2. The method of claim 1 , wherein the forming a bi-layer capping region further includes etching the titanium layer and the titanium oxide layer based on a mask pattern.
3. The method of claim 1 , wherein the depositing a titanium oxide layer includes depositing titanium oxide by atomic layer deposition (ALD).
4. The method of claim 1 , wherein the depositing a titanium oxide layer includes controlling thickness of the titanium oxide layer by depositing titanium oxide with atomic layer deposition (ALD).
5. The method of claim 1 , wherein the depositing a titanium layer includes depositing titanium using physical vapor deposition (PVD).
6. The method of claim 1 , wherein the forming a metal oxide memory region includes forming hafnium oxide.
7. The method of claim 1 , wherein the forming a metal oxide memory region includes forming a metal oxide that does not include titanium.
8. The method of claim 1 , wherein the forming a top electrode includes forming titanium nitride.
9. The method of claim 1 , further comprising forming a monolithic three dimensional memory array that includes fabricating the memory cell within the monolithic three dimensional memory array.
10. The method of claim 9 , wherein forming the monolithic three dimensional memory array includes forming multiple memory levels above a single substrate.
11. A method of fabricating non-volatile storage elements, the method comprising:
depositing a first layer for bottom electrodes;
depositing a second layer over the first layer for metal oxide memory regions;
depositing a bi-layer over the second layer, depositing the bi-layer includes:
depositing a titanium layer over the second layer using physical vapor deposition (PVD), the titanium layer contains un-reacted titanium as deposited; and
depositing a titanium oxide layer over the titanium layer without air break, including depositing titanium oxide with atomic layer deposition (ALD);
depositing a third layer over the bi-layer for top electrodes;
forming a mask pattern over the third layer; and
etching the first layer, the second layer, the bi-layer, and the third layer based on the mask pattern, including etching with hydrofluoric (HF) acid while at least a portion of the titanium layer is still un-reacted and has not oxidized to become titanium oxide.
12. The method of claim 11 , wherein the depositing a titanium oxide layer includes controlling thickness of the titanium oxide layer by depositing titanium oxide with atomic layer deposition (ALD).
13. A method comprising:
forming a monolithic three dimensional memory array above a substrate, the monolithic three dimensional memory array having non-volatile storage elements, including:
depositing a first layer for bottom electrodes of the non-volatile storage elements;
depositing a second layer over the first layer for metal oxide memory regions of the non-volatile storage elements;
depositing a bi-layer over the second layer, depositing the bi-layer includes:
depositing a titanium layer over the second layer, the titanium layer contains un-reacted titanium as deposited; and
depositing a titanium oxide layer over the titanium layer;
depositing a third layer over the bi-layer for top electrodes;
forming a mask pattern over the third layer; and
etching the first layer, the second layer, the bi-layer, and the third layer based on the mask pattern, including etching with hydrofluoric (HF) acid while at least a portion of the titanium layer is still un-reacted and has not oxidized to become titanium oxide.