IP Library Granted Patent US 9,440,844
Granted Patent B2
US 9,440,844 · App. 13/854,834 · Granted Sep 13, 2016

Optical and infrared imaging system

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Quick Facts
Patent No.
US 9,440,844
App. No.
13/854,834
Granted
Sep 13, 2016
Kind
B2
Abstract

Imaging systems may include an image sensor and a microelectromechanical systems array. The microelectromechanical systems array may be mounted over the image sensor. The system may include an infrared lens that focuses infrared light onto a first surface of the microelectromechanical systems array and a visible light source that illuminates an opposing second surface of the microelectromechanical systems array. The image sensor may capture images of the opposing second surface of the microelectromechanical systems array. The system may include processing circuitry that generates infrared images of a scene using the captured images of the microelectromechanical systems array. Microelectromechanical systems elements in the microelectromechanical systems array may change position or shape in response to infrared light that is absorbed by the microelectromechanical systems elements. Each microelectromechanical systems element may include infrared absorbing material on a metal layer. The system may include optical elements that focus visible light onto the image sensor.

Claims (36)

1. An imaging system, comprising:

an image sensor;

a microelectromechanical systems array mounted over the image sensor, wherein the image sensor is configured to capture images of the microelectromechanical systems array;

processing circuitry configured to generate an infrared image of a scene using the captured images of the microelectromechanical systems array; and

an optical lens that focuses light from the scene onto the image sensor via the beam splitter, wherein the microelectromechanical systems array comprises microelectromechanical systems elements each comprising:

a first metal layer;

a second metal layer on the first metal layer; and

a patterned layer of infrared light absorbing material in thermal contact with the second metal layer.

2. The imaging system defined in claim 1 wherein the image sensor comprises a complementary-metal-oxide-semiconductor image sensor.

3. The imaging system defined in claim 2 wherein the microelectromechanical systems array has a first surface and an opposing second surface and wherein the first surface is configured to absorb infrared light from the scene and wherein the image sensor faces the opposing second surface.

4. The imaging system defined in claim 3 , further comprising a light source.

5. The imaging system defined in claim 4 wherein the light source is configured to illuminate the opposing second surface.

6. The imaging system defined in claim 5 , further comprising a beam splitter interposed between the microelectromechanical systems array and the image sensor that directs light from the light source onto the opposing second surface.

7. The imaging system defined in claim 6 wherein the image sensor is configured to capture the images of the microelectromechanical systems array using a portion of the light from the light source that has passed through the beam splitter.

8. The imaging system defined in claim 7 wherein the light source comprises a light-emitting diode.

9. The imaging system defined in claim 8 , further comprising a lens that focuses the light from the light source onto the beam splitter.

10. The imaging system defined in claim 9 , further comprising an infrared lens that focuses the infrared light from the scene onto the first surface of the microelectromechanical systems array.

11. An optical and infrared imaging system, comprising:

an image sensor;

an optical lens;

a microelectromechanical systems array; and

a plurality of beam splitters that directs light from the optical lens and the microelectromechanical systems array onto the image sensor, wherein the beam splitters direct light from the optical lens to the image sensor in a first mode of operation and from the optical lens away from the image sensor in a second mode of operation.

12. The optical and infrared imaging system defined in claim 11 wherein, in the second mode of operation, the plurality of beam splitters directs light from the microelectromechanical systems array onto the image sensor.

13. The optical and infrared imaging system defined in claim 11 , further comprising an infrared lens that focuses infrared light onto the microelectromechanical systems array.

14. A system, comprising:

a central processing unit;

memory;

input-output circuitry; and

an imaging device, wherein the imaging device comprises:

an image sensor, and

a microelectromechanical systems array mounted over the image sensor, wherein the image sensor is configured to capture images of the microelectromechanical systems array, wherein the central processing unit is configured to generate infrared images of a scene using the captured images of the microelectromechanical systems array, and wherein the microelectromechanical systems array comprises microelectromechanical systems elements each comprising:

a metal layer;

a patterned layer of infrared light absorbing material on the metal layer; and

an electrode that is stationary with respect to the image sensor and that is mounted directly under the metal layer at a distance from the metal layer, wherein the metal layer completely overlaps the electrode, and wherein the electrode is separate from the metal layer.

15. The system defined in claim 14 , further comprising a lens, wherein the microelectromechanical systems array is interposed between the lens and the image sensor.

16. The system defined in claim 15 , further comprising a light source that illuminates a surface of the microelectromechanical systems array, wherein the surface faces the image sensor.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2013
From: SALSMAN, KENNETH EDWARD
To: APTINA IMAGING CORPORATION
Reel/Frame 030127/0359 →