High temperature atomic layer deposition of silicon oxide thin films
View Patent ↗Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof R 1 R 2 m Si(NR 3 R 4 ) n X p ; and I. R 1 R 2 m Si(OR 3 ) n (OR 4 ) q X p . II
1. A process to deposit silicon oxide, the process comprising the steps of:
a) providing a substrate in a reactor;
b) introducing into the reactor at least one silicon precursor comprising at least one anchoring functionality and a passivating functionality, wherein the at least one silicon precursor is at least one selected from the group consisting of diethylaminotrimethylsilane, dimethylaminotrimethylsilane, dimethylaminodimethylphenylsilane, diethylaminodimethylphenylsilane, ethylmethylaminotrimethylsilane, t-butylaminotrimethylsilane, iso-propylaminotrimethylsilane, di-isopropylaminotrimethylsilane, pyrrolidinotrimethylsilane, bis(diethylamino)dimethylsilane, bis(dimethylamino)dimethylsilane, bis(ethylmethylamino)dimethylsilane, bis(di-isopropylamino)dimethylsilane, bis(iso-propylamino)dimethylsilane, bis(tert-butylamino)dimethylsilane, bis(pyrrolidino)dimethylsilane bis(diethylamino)methylvinylsilane, bis(dimethylamino)methylvinylsilane, bis(ethylmethylamino)methylvinylsilane, bis(di-isopropylamino)methylvinylsilane, bis(iso-propylamino)methylvinylsilane, bis(tert-butylamino)methylvinylsilane, bis(pyrrolidino)methylvinylsilane, 2,6-dimethylpiperidinotrimethylsilane, tris(dimethylamino)chlorosilane, tris(dimethylamino)phenylsilane, tris(dimethylamino)methylsilane, methylaminotrimethylsilane, ethylaminotrimethylsilane, iso-propylaminotrimethylsilane, normal-propylaminotrimethylsilane, iso-butylaminotrimethylsilane, sec-butylaminotrimethylsilane, normal-butylaminotrimethylsilane, cyclohexylaminotrimethylsilane, 2-methylpyrrolidinotrimethylsilane, 2,5-dimethylpyrrolidinotrimethylsilane, piperidinotrimethylsilane, 1-methylpiperazinotrimethylsilane, pyrrolyltrimethylsilane, 2,5-dimethylpyrrolyltrimethylsilane, and imidazolyltrimethylsilane;
c) purging the reactor with purge gas;
d) introducing an oxygen source into the reactor, wherein the oxygen source is selected from the group consisting of water, oxygen (O 2 ), oxygen plasma, ozone (O 3 ), nitrous oxide (N 2 O), nitrogen dioxide (NO 2 ) carbon monoxide (CO), carbon dioxide (CO 2 ), and combinations thereof;
e) purging the reactor with purge gas; and
repeating steps b) through e) until a desired thickness is deposited,
wherein process temperature ranges from over 600 to 800° C. and pressure ranges from 50 milliTorr (mTorr) to 760 Torr.
2. The process of claim 1 , wherein the purge gas is selected from the group consisting of nitrogen, helium and argon.
3. The process of claim 1 , wherein the oxygen plasma is generated either in situ or remotely.
4. The process of claim 1 , wherein the process temperature ranges from 600 to 800° C.
5. The process of claim 1 wherein the at least one silicon precursor is selected from the group consisting of diethylaminotrimethylsilane, dimethylaminotrimethylsilane, dimethylaminodimethylphenylsilane, pyrrolyltrimethylsilane, pyrrolidinotrimethylsilane tris(dimethylamino)chlorosilane, tris(dimethylamino)phenylsilane, tris(dimethylamino)methylsilane, and bis(dimethylamino)dimethylsilane.
6. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of diethylaminotrimethylsilane.
7. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of dimethylaminotrimethylsilane.
8. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of dimethylaminodimethylphenylsilane.
9. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of bis(dimethylamino)dimethylsilane.
10. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of pyrrolyltrimethylsilane.
11. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of pyrrolidinotrimethylsilane.
12. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of tris(dimethylamino)chlorosilane.
13. The process of claim 5 wherein the at least one silicon precursor is selected from the group consisting of tris(dimethylamino)methylsilane.